High performance ring oscillators from 10-nm wide silicon nanowire field-effect transistors

Nano Research

Volumn 4, Issue 10, 2011, Pages 1005-1012

  Huang, Ruo Gu ^a   Tham, Douglas ^b   Wang, Dunwei ^c   Heath, James R ^b  

^a California Institute of Technology   (United States)

^b California Institute of Technology   (United States)

^c BOSTON COLLEGE   (United States)

Author keywords

field effect transistor (FET); inverter; ring oscillator; Silicon nanowire (SiNW); surface treatment

Indexed keywords

EID: 80053436070     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-011-0157-2     Document Type: Article

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