Fabrication and characterization of multiple-gated poly-Si nanowire thin-film transistors and impacts of multiple-gate structures on device fluctuations

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 3063-3069

  Hsu, Hsing Hui ^a   Liu, Ta Wei ^a   Chan, Leng ^a   Lin, Chuan Ding ^a   Huang, Tiao Yuan ^a   Lin, Horng Chih ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Field effect transistor; Multiple gate (MG); Nanowire (NW); Poly Si; Variation

Indexed keywords

FABRICATION; FIELD EFFECT TRANSISTORS; MAGNESIUM PRINTING PLATES; NANOSTRUCTURED MATERIALS; NANOWIRES; POLYSILICON; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

CHANNEL SURFACES; DEVICE FLUCTUATIONS; DEVICE PERFORMANCES; DRIVE CURRENTS; FIELD-EFFECT TRANSISTOR; GATE CONFIGURATIONS; GATE STRUCTURES; LITHOGRAPHIC TOOLS; MULTIPLE-GATE (MG); ON/OFF CURRENT RATIOS; POLY-SI; SI NANOWIRES; SIMPLE METHODS; SUBTHRESHOLD SWINGS; TEST STRUCTURES; VARIATION;

NANOSTRUCTURES;

EID: 56549130240     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2005161     Document Type: Article

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