Finite element analysis of deflection and residual stress on machined ultra-thin silicon wafers

Semiconductor Science and Technology

Volumn 26, Issue 10, 2011, Pages

  Tian, Y B ^a   Zhou, L ^b   Zhong, Z W ^c   Sato, H ^b   Shimizu, J ^b  

^a SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

^b IBARAKI UNIVERSITY   (Japan)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AXISYMMETRIC FINITE ELEMENTS; BULK SILICON; FE MODEL; FULL-FIELD; GEOMETRICAL DIMENSIONS; IN-PLANE STRAINS; INITIAL STRAINS; INITIAL STRESS; MACHINING QUALITY; MINIATURIZED ELECTRONICS; RAPID DEVELOPMENT; THINNING PROCESS; TWO-LAYER STRUCTURES; ULTRA-THIN; ULTRATHIN SILICON; WAFER DEFLECTION;

COMPUTER SIMULATION; CRYSTALLOGRAPHY; DEFLECTION (STRUCTURES); FINITE ELEMENT METHOD; RESIDUAL STRESSES; SEMICONDUCTING SILICON COMPOUNDS; STRAIN; STRESS CONCENTRATION;

SILICON WAFERS;

EID: 80053348477     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/10/105002     Document Type: Article

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