Nanoindentation tests on diamond-machined silicon wafers

Applied Physics Letters

Volumn 86, Issue 18, 2005, Pages 1-3

  Yan, Jiwang ^a,d   Takahashi, Hirokazu ^a   Tamaki, Jun'ichi ^a   Gai, Xiaohui ^a   Harada, Hirofumi ^b   Patten, John ^c  

^a KITAMI INSTITUTE OF TECHNOLOGY   (Japan)

^b Siltronic Japan Corporation   (Japan)

^c WESTERN MICHIGAN UNIVERSITY   (United States)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYERS; DIAMOND-TURNED SILICON WAFERS; MACHINING PERFORMANCE; NANOINDENTATION;

AMORPHOUS MATERIALS; FUNCTIONS; HARDNESS; MICROELECTRONICS; PLASTICITY; SILICON WAFERS;

DIAMONDS;

EID: 20844463419     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1924895     Document Type: Article

References (25)

1. S. G. Kaplan and L. M. Hanssen, Infrared Phys. Technol. 43, 389 (2002).
2. J. Yan, K. Syoji, and T. Kuriyagawa, J. Soc. Precis. Eng. 68, 561 (2002).
3. P. N. Blake and R. O. Scattergood, J. Am. Ceram. Soc. 73, 949 (1990).
4. T. Shibata, S. Fujii, E. Makino, and M. Ikeda, Precis. Eng. 18, 130 (1996).
5. J. Yan, K. Syoji, and T. Kuriyagawa, J. Soc. Precis. Eng. 65, 1008 (1999).
6. J. Yan, M. Yoshino, T. Kuriyagawa, T. Shirakashi, K. Syoji, and R. Komanduri, Mater. Sci. Eng., A 297, 230 (2001).
7. B. V. Tanikella, A. H. Somasekhar, A. T. Sowers, R. J. Nemanich, and R. O. Scattergood, Appl. Phys. Lett. 69, 2870 (1996).
8. T. Shibata, A. Ono, K. Kurihara, E. Makino, and M. Ikeda, Appl. Phys. Lett. 65, 2553 (1994).
9. C. Jeynes, K. E. Puttick, L. C. Whitmore, K. Gartner, A. E. Gee, D. K. Millen, R. P. Webb, R. M. A. Peel, and B. J. Sealy, Nucl. Instrum. Methods Phys. Res. B 118, 431 (1996).
10. K. E. Puttick, L. C. Whitmore, C. L. Chao, and A. E. Gee, Philos. Mag. A 69, 91 (1994).
11. J. Yan, J. Appl. Phys. 95, 2094 (2004).
12. I. V. Gridneva, Y. V. Milman, and V. I. Trefilov, Phys. Status Solidi A 14, 177 (1972).
13. V. G. Eremenko and V. I. Nikitenko, Phys. Status Solidi A 14, 317 (1972).
14. G. M. Pharr, W. C. Oliver, and D. S. Harding, J. Mater. Res. 6, 1129 (1991).
15. D. L. Callahan and J. C. Morris, J. Mater. Res. 7, 1614 (1992).
16. D. R. Clarke, M. C. Kroll, P. D. Kirchner, and R. F. Cook, Phys. Rev. Lett. 60, 2156 (1988).
17. A. Kailer, Y. G. Gogotsi, and K. G. Nickel, J. Appl. Phys. 81, 3057 (1997).
18. J. E. Bradby, J. S. Williams, J. Wong-Leung, M. V. Swain, and P. Munroe, Appl. Phys. Lett. 77, 3749 (2000).
19. V. Domnich, Y. Gogotsi, and S. Dub, Appl. Phys. Lett. 76, 2214 (2000).
20. H. Saka, A. Shimatani, M. Suganuma, and M. Suprijadi, Philos. Mag. A 82, 1971 (2002).
21. J. Jang, S. Wen, M. J. Lance, I. M. Anderson, and G. M. Pharr, Mater. Res. Soc. Symp. Proc. 795, 313 (2004).
22. I. Zarudi, J. Zou, and L. C. Zhang, Appl. Phys. Lett. 82, 874 (2003).
23. M. M. Khayyat, G. K. Banini, D. G. Hasko, and M M. Chaudhri, J. Phys. D 36, 1300 (2003).
24. J. Yan, K. Syoji, T. Kuriyagawa, and H. Suzuki, J. Mater. Process. Technol. 121, 363 (2002).
25. J. Yan, K. Syoji, and T. Kuriyagawa, J. Soc. Precis. Eng. 66, 1130 (2000).