Joule-assisted silicidation for short-channel silicon nanowire devices

ACS Nano

Volumn 5, Issue 9, 2011, Pages 7117-7123

  Mongillo, Massimo ^a   Spathis, Panayotis ^a   Katsaros, Georgios ^a   Gentile, Pascal ^a   Sanquer, Marc ^a   De Franceschi, Silvano ^a  

^a CEA GRENOBLE   (France)

Author keywords

nanoelectronics; semiconductor nanowires; silicidation; silicon transistors

Indexed keywords

ELECTRICAL CONTROL; ELECTRICAL RESISTANCES; JOULE EFFECTS; NICKEL ELECTRODE; NICKEL SILICIDE; REAL TIME MONITORING; SEMICONDUCTOR NANOWIRE; SILICIDATION; SILICIDATION PROCESS; SILICON CHANNEL; SILICON NANOWIRE DEVICE; SILICON TRANSISTORS; UNDOPED SILICON;

ELECTRODES; NANOELECTRONICS; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES;

SEMICONDUCTING SILICON;

EID: 80053316685     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn202524j     Document Type: Article

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