SCOPUS 정보 검색 플랫폼

Nanotechnology

Volumn 19, Issue 12, 2008, Pages

The growth of small diameter silicon nanowires to nanotrees

(8) Gentile, P a David, T a Dhalluin, F a,b Buttard, D a Pauc, N a Den Hertog, M a Ferret, P a Baron, T b

a CEA GRENOBLE (France)

b CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY (SPECIFIC GRAVITY); DEPOSITION; GROWTH RATE; GROWTH TEMPERATURE; NANOCRYSTALLINE SILICON;

GROWTH CONDITIONS; NANOTREES; SILICON NANOWIRES; VAPOUR-LIQUID-SOLID (VLS) MODE;

NANOWIRES;

GOLD; NANOWIRE; SILICON;

ARTICLE; CATALYST; COLLOID; DENSITY; ELECTRIC FIELD; GROWTH; LIQUID; MEASUREMENT; NANOTECHNOLOGY; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPE; SOLID; SURFACE PROPERTY; TEMPERATURE DEPENDENCE; VAPOR;

EID: 42549134990 PISSN: 09574484 EISSN: 13616528 Source Type: Journal
DOI: 10.1088/0957-4484/19/12/125608 Document Type: Article

Times cited : (44)

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