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Volumn 99, Issue 9, 2011, Pages

Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies

(5) Gür, Emre a,b Zhang, Zeng b Krishnamoorty, Sriram b Rajan, S b Ringel, S A b

a ATATÜRK UNIVERSITY (Turkey)

b The Ohio State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; DEEP LEVEL; DEEP-LEVEL DEFECTS; DEEP-LEVEL SPECTROSCOPY; DEFECT CHARACTERIZATION; DEFECT LEVELS; ENERGY POSITION; METAL STACKS; OPTICAL SPECTROSCOPY; SCHOTTKY DIODES; TRAP CONCENTRATION; VALANCE BANDS;

CARRIER CONCENTRATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; DIODES; GALLIUM;

SCHOTTKY BARRIER DIODES;

EID: 80052529252 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3631678 Document Type: Article

Times cited : (21)

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