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Journal of Electronic Materials

Volumn 40, Issue 4, 2011, Pages 369-376

Quantitative and depth-resolved investigation of deep-level defects in InGaN/GaN heterostructures

(3) Armstrong, A a Crawford, M H a Koleske, D D a

a SANDIA NATIONAL LABORATORIES (United States)

Author keywords

compound semiconductor; Deep level; InGaN

Indexed keywords

AREAL DENSITIES; BANDGAP STATE; CAPACITANCE-VOLTAGE TECHNIQUES; COMPOUND SEMICONDUCTORS; DEEP LEVEL; DEEP LEVEL OPTICAL SPECTROSCOPY; DEEP-LEVEL DEFECTS; DEFECT STATE; DEPTH-RESOLVED; GAN: MG; GROWTH CONDITIONS; HETEROSTRUCTURES; INDUCED ELECTRIC FIELDS; INGAN; INGAN/GAN; MULTIQUANTUM WELLS; RADIATIVE EFFICIENCY; VALENCE-BAND MAXIMUMS;

CRYSTALS; DEFECTS; ELECTRIC FIELDS; GALLIUM NITRIDE; HETEROJUNCTIONS; INDIUM; LIGHT EMITTING DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; ZINC OXIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79952191994 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-010-1453-4 Document Type: Article

Times cited : (10)

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