Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy

Physica Status Solidi (B) Basic Research

Volumn 244, Issue 6, 2007, Pages 1867-1871

  Armstrong, A ^a   Poblenz, C ^b   Mishra, U K ^b   Speck, J S ^b   Ringel, S A ^a  

^a The Ohio State University   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34250355641     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200674831     Document Type: Article

References (11)

1. R. Coffie et al., IEEE Electron Device Lett. 23, 588 (2002).
2. P. Kozodoy, S. P. DenBaars, and U. K. Mishra, J. Appl. Phys. 87, 770 (2000).
3. A. Chantre, G. Vincent, and D. Bios, Phys. Rev. B 23, 5335 (1981).
4. A. Hierro, D. Kwon, S. A. Ringel, M. Hansen, J. S. Speck, U. K. Mishra, and S. P. DenBaars, Appl. Phys. Lett. 76, 3064 (2000).
5. A. Armstrong, A. R. Arehart, D. Green, U. K. Mishra, J. S. Speck, and S. A. Ringel, J. Appl. Phys. 98, 053704 (2005).
6. A. Hierro, A. R. Arehart, B. Heying, M. Hansen, U. K. Mishra, S. P. DenBaars, J. S. Speck, and S. A. Ringel, Appl. Phys. Lett. 80, 805 (2002).
7. W. Goetz, N. M. Johnson, R. A. Street, H. Amano, and I. Akasaki, Appl. Phys. Lett. 66, 1340 (1995).
8. E. Calleja et al., Phys. Rev. B 55, 4689 (1997).
9. A. F. Wright, J. Appl. Phys. 92, 2575 (2002).
10. L. Eckey et al., J. Appl. Phys. 84, 5828 (1998).
11. W. Goetz, N. M. Johnson, and D. P. Bour, Appl. Phys. Lett. 68, 3470 (1996).