Deep level centers in InGaN/GaN heterostructure grown on sapphire and free-standing GaN

Thin Solid Films

Volumn 515, Issue 10, 2007, Pages 4509-4513

  Soh, C B ^a,b   Chua, S J ^a,b   Chen, P ^b   Chi, D Z ^b   Liu, W ^b   Hartono, H ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

AFM; DLTS; InGaN; X ray diffraction

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; INDIUM ALLOYS; MORPHOLOGY; REACTION KINETICS; SAPPHIRE; SUBSTRATES; X RAY DIFFRACTION;

AFM; DEEP LEVEL CENTERS; FREE-STANDING GAN; INGAN;

HETEROJUNCTIONS;

EID: 33847027357     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.07.174     Document Type: Article

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