Impurity incorporation in InGaN grown by rf plasma-assisted molecular beam epitaxy

Applied Physics Letters

Volumn 81, Issue 15, 2002, Pages 2767-2769

  Poblenz, C ^a   Mates, T ^a   Craven, M ^a   Denbaars, S P ^a   Speck, J S ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BASE LINE; DIFFERENT STRUCTURE; GAN FILM; GAN GROWTH; GROWTH SURFACES; IMPURITY INCORPORATION; OPTIMAL CONDITIONS; OXYGEN INCORPORATION; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RF PLASMA; SECONDARY ION MASS SPECTROSCOPY; SURFACE ATOMIC STRUCTURE; WETTING LAYER;

BORON; BORON COMPOUNDS; EPITAXIAL GROWTH; GALLIUM NITRIDE; INDIUM; MASS SPECTROMETERS; MOLECULAR BEAM EPITAXY; OXYGEN; PLASMAS; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY; SURFACE STRUCTURE;

WETTING;

EID: 79956003154     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1512817     Document Type: Article

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