Printed array of thin-dielectric metal-oxide-metal (MOM) tunneling diodes

Journal of Applied Physics

Volumn 110, Issue 4, 2011, Pages

  Bareiß, Mario ^a   Hochmeister, Andreas ^a   Jegert, Gunther ^a   Zschieschang, Ute ^b   Klauk, Hagen ^b   Huber, Rupert ^a   Grundler, Dirk ^a   Porod, Wolfgang ^c   Fabel, Bernhard ^a   Scarpa, Giuseppe ^a   Lugli, Paolo ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^c UNIVERSITY OF NOTRE DAME   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AC CURRENTS; ALUMINUM OXIDE FILMS; ALUMINUM OXIDES; DEVICE PARAMETERS; DIRECT CURRENT; DIRECT TUNNELING; FOWLER-NORDHEIM TUNNELING; HIGH FREQUENCY HF; LARGE AREA ARRAYS; MOM DIODES; ORDERS OF MAGNITUDE; OXIDE INTERFACES; QUANTUM DEVICE; REVERSE CURRENTS; TRANSFER PRINTING; TUNNELING DIODES; ULTRA-THIN; ULTRATHIN DIELECTRICS;

ALUMINUM; CAPACITANCE MEASUREMENT; DIODES; DISTILLATION; OXIDE FILMS; OXIDES; PRINTING; PRINTING PRESSES; TUNNEL DIODES;

METALS;

EID: 80052419943     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3615952     Document Type: Article

References (39)

1. I. Wilke, W. Herrmann, and F. K. Kneubhl, Appl. Phys. B 58, 87 (1994). 10.1007/BF01082341
2. C. Fumeaux, J. Alda, and G. D. Boremann, Opt. Lett. 24, 1629 (1999). 10.1364/OL.24.001629
3. J. A. Bean, B. Tiwari, G. H. Bernstein, P. Fay, and W. Porod, J. Vac. Sci. Technol. B 27, 11 (2009). 10.1116/1.3039684
4. B. Tiwari, J. A. Bean, G. Szakmany, G. H. Bernstein, P. Fay, and W. Porod, J. Vac. Sci. Technol. B 27, 2153 (2009). 10.1116/1.3204979
5. J. Alda, J. M. Rico-Garcia, J. M. Lopez-Alonso, and G. D. Boreman, Nanotechnol. 16, 230 (2005). 10.1088/0957-4484/16/5/017
6. B. A. Slovick, J. A. Bean, P. M. Krenz, and G. D. Boreman, Opt. Express 18, 20960 (2010). 10.1364/OE.18.020960
7. S. Harrer, S. Strobel, G. Scarpa, G. Abstreiter, M. Tornow, and P. Lugli, IEEE Trans. Nanotechnol. 7, 363 (2008). 10.1109/TNANO.2008.917782
8. J. Zaumseil, M. A. Meitl, J. W. P. Hsu, B. R. Acharya, K. W. Baldwin, Y. L. Loo, and J. A. Rogers, Nano Lett. 3, 1223 (2003). 10.1021/nl0344007
9. Y. L. Loo, D. V. Lang, J. A. Rogers, and J. W. P. Hsu, Nano Lett. 3, 913 (2003). 10.1021/nl034207c
10. Y. L. Loo, R. L. Willett, K. W. Baldwin, and J. A. Rogers, J. Am. Chem. Soc. 124, 7654 (2002). 10.1021/ja026355v
11. J. G. Simmons, J. Appl. Phys. 34, 1793 (1963). 10.1063/1.1702682
12. T. W. Hickmott, J. Appl. Phys. 108, 093703 (2010). 10.1063/1.3504220
13. R. T. Weitz, U. Zschieschang, F. Effenberg, H. Klauk, M. Burghard, and K. Kern, Nano Lett. 7, 22 (2007). 10.1021/nl061534m
14. M. Lafkioti, B. Krauss, T. Lohmann, U. Zschieschang, H. Klauk, K. v. Klitzing, and J. H. Smet, Nano Lett. 10, 1149 (2010). 10.1021/nl903162a
15. R. Maboudian and R. T. Howe, J. Vac. Sci. Technol. B 15, 1 (1997). 10.1116/1.589247
16. W. Lee, R. Ji, C. A. Ross, U. Gsele, and K. Nielsch, Small 2, 978 (2006). 10.1002/smll.v2:8/9
17. P. Russer, N. Fichtner, P. Lugli, W. Porod, J. A. Russer, and H. Yordanov, IEEE Microw. Mag. 11, 58 (2010). 10.1109/MMM.2010.938570
18. R. T. Weitz, U. Zschieschang, A. Forment-Aliaga, D. Klblein, M. Burghard, K. Kern, and H. Klauk, Nano Lett. 4, 1335 (2009). 10.1021/nl802982m
19. U. Zschieschang, F. Ante, M. Schlrholz, M. Schmidt, K. Kern, and H. Klauk, Adv. Mater. 22, 4489 (2010). 10.1002/adma.201001502
20. H. Ryu, D. Klblein, R. T. Weitz, F. Ante, U. Zschieschang, K. Kern, O. G. Schmidt, and H. Klauk, Nanotechnol. 21, 475207 (2010). 10.1088/0957-4484/21/47/ 475207
21. S. Strobel, S. Harrer, G. P. Blanco, G. Scarpa, G. Abstreiter, P. Lugli, and M. Tornow, Small 5, 579 (2009). 10.1002/smll.200801400
22. M. Nakamura, T. Aoki, and Y. Hatanaka, J. Mater. Res. 16, 2 (2001). 10.1557/JMR.2001.0089
23. T. Ishigaki, H. Haneda, N. Okada, and S. Ito, Thin Solid Films 390, 20 (2001). 10.1016/S0040-6090(01)00935-X
24. Y. L. Loo, D. V. Lang, J. A. Rogers, and J. W. P. Hsu, Nano Lett. 3, 913 (2003). 10.1021/nl034207c
25. G. Kissinger and W. Kissinger, Phys. Status Solidi A 123, 185 (1991). 10.1002/pssa.v123:1
26. J. H. Anderson and K. A. Wickersheim, Surf. Sci. 2, 252 (1964). 10.1016/0039-6028(64)90064-0
27. G. Jegert, A. Kersch, W. Weinreich, U. Schrder, and P. Lugli, Appl. Phys. Lett. 96, 062113 (2009). 10.1063/1.3310065
28. G. Jegert, A. Kersch, W. Weinreich, and P. Lugli, IEEE Trans. Electron Devices 58, 327 (2011). 10.1109/TED.2010.2090158
29. R. Tsu and L. Esaki, Appl. Phys. Lett. 22, 562 (1973). 10.1063/1.1654509
30. J. Robertson, J. Vac. Sci. Technol. B 27, 277 (2009). 10.1116/1.3072517
31. J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000). 10.1116/1.591472
32. T. W. Hickmott, J. Appl. Phys. 97, 104505 (2005). 10.1063/1.1897490
33. V. K. Gueorguiev, P. V. Aleksandrova, T. E. Ivanov, and J. B. Koprinarova, Thin Solid Films 517, 1815 (2009). 10.1016/j.tsf.2008.10.010
34. T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P. Chen, M. Hong, J. Kwo, W. Tsai, and Y. C. Wang, Appl. Phys. Lett. 93, 033516 (2008). 10.1063/1.2956393
35. T. W. Hickmott, J. Appl. Phys. 87, 7903 (2000). 10.1063/1.373474
36. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001). 10.1063/1.1361065
37. M. Groner, J. W. Elam, F. H. Fabreguette, and S. M. George, Thin Solid Films 413, 186 (2002). 10.1016/S0040-6090(02)00438-8
38. T. W. Hickmott, J. Appl. Phys. 89, 5502 (2001). 10.1063/1.1366653
39. C. A. Mead, Phys. Rev. Lett. 6, 545 (1961). 10.1103/PhysRevLett.6.545