Logic circuits based on individual semiconducting and metallic carbon-nanotube devices

Nanotechnology

Volumn 21, Issue 47, 2010, Pages

  Ryu, Hyeyeon ^a   Kälblein, Daniel ^a   Weitz, R Thomas ^b   Ante, Frederik ^a   Zschieschang, Ute ^a   Kern, Klaus ^a,c   Schmidt, Oliver G ^d,e   Klauk, Hagen ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b HARVARD UNIVERSITY   (United States)

^c EPFL   (Switzerland)

^d CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^e IFW DRESDEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GLASS SUBSTRATES; INTEGRATION DENSITY; INTERCONNECT LAYERS; LOAD RESISTORS; METALLIC CARBON NANOTUBES; METALLIC NANOTUBES; NANOSCALE TRANSISTORS; NANOTUBE DEVICES; PLASTIC SUBSTRATES; RESISTIVE LOADS; SEMI-CONDUCTING NANOTUBES; SEMICONDUCTING CARBON NANOTUBES;

CARBON NANOTUBES; INTEGRATED CIRCUITS; RESISTORS; SEMICONDUCTING GLASS; SUBSTRATES; SWITCHING CIRCUITS; TRANSISTORS;

LOGIC CIRCUITS;

EID: 78650085782     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/47/475207     Document Type: Article

References (26)

1. Javey A, Guo J, Farmer D B, Wang Q, Wang D W, Gordon R G, Lundstrom M and Dai H 2004 Nano Lett. 4 447
2. Javey A, Guo J, Farmer D B, Wang Q, Yenilmez E, Gordon R G, Lundstrom M and Dai H 2004 Nano Lett. 4 1319
3. Javey A, Tu R, Farmer D B, Guo J, Gordon R G and Dai H 2005 Nano Lett. 5 345
4. Zhang Z Y, Wang S, Ding L, Liang X L, Xu H L, Shen J, Chen Q, Cui R L, Li Y and Peng L M 2008 Appl. Phys. Lett. 92 133117
5. Zhang Z Y et al 2008 Nano Lett. 8 3696
6. Appenzeller J, Lin Y M, Knoch J and Avouris P 2004 Phys. Rev. Lett. 93 196805
7. Chen J, Klinke C, Afzali A and Avouris P 2005 Appl. Phys. Lett. 86 123108
8. Chen Z, Appenzeller J, Knoch J, Lin Y and Avouris P 2005 Nano Lett. 5 1497
9. Kim W, Javey A, Tu R, Cao J, Wang Q and Dai H 2005 Appl. Phys. Lett. 87 173101
10. Tulevski G, Hannon J, Afzali A, Chen Z, Avouris P and Kagan C R 2007 J. Am. Chem. Soc. 129 11964
11. Weitz R T, Zschieschang U, Forment-Aliaga A, Kälblein D, Burghard M, Kern K and Klauk H 2009 Nano Lett. 9 1335
12. Javey A, Kim H, Brink M, Wang Q, Ural A, Guo J, McIntyre P, McEuen P, Lundstrom M and Dai H 2002 Nat. Mater. 1 241
13. Lu Y, Bangsaruntip S, Wang X, Zhang L, Nishi Y and Dai H 2006 J. Am. Chem. Soc. 128 3518
14. Yang M H, Teo K B K, Gangloff L, Milne W I, Hasko D G, Robert Y and Legagneux P 2006 Appl. Phys. Lett. 88 113507
15. Weitz R T, Zschieschang U, Effenberger F, Klauk H, Burghard M and Kern K 2007 Nano Lett. 7 22
16. Bode D, Rolin C, Schols S, Debucquoy M, Steudel S, Gelinck G H, Genoe J and Heremans P 2010 IEEE Trans. Electron Devices 57 201
17. Javey A, Wang Q, Ural A, Li Y M and Dai H 2002 Nano Lett. 2 929
18. Chen Z H, Appenzeller J, Lin Y M, Sippel-Oakley J, Rinzler A G, Tang J Y, Wind S J, Solomon P M and Avouris P 2006 Science 311 1735
19. Gelinck G H et al 2004 Nat. Mater. 3 106
20. Myny K, Steudel S, Vicca P, Beenhakkers M J, van Aerle N A J M, Gelinck G H, Genoe J, Dehaene W and Heremans P 2009 Solid-State Electron. 53 1220
21. Bachtold A, Hadley P, Nakanishi T and Dekker C 2001 Science 294 1317
22. Klauk H, Zschieschang U, Pflaum J and Halik M 2007 Nature 445 745
23. Kang H, Han K K, Park J E and Lee H H 2007 Org. Electron. 8 460
24. Goetting L B, Deng T and Whitesides G M 1999 Langmuir 15 1182
25. Jedaa A, Burkhardt M, Zschieschang U, Klauk H, Habich D, Schmid G and Halik M 2009 Org. Electron. 10 1442
26. Anantram M P and Govindan T R 1998 Phys. Rev. B 58 4882