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Journal of Applied Physics

Volumn 108, Issue 9, 2010, Pages

Defect conduction bands, localization, and temperature-dependent electron emission from Al-Al2O3-Au diodes

(1) Hickmott, T W a

a STATE UNIVERSITY OF NEW YORK (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BREAK DOWN; CONDUCTION CURRENT; CONDUCTION MECHANISM; DEFECT CENTERS; DEFECT CONDUCTION; DEFECT LEVELS; I - V CURVE; INTERMEDIATE TEMPERATURES; IV CHARACTERISTICS; LOW TEMPERATURES; METAL-NONMETAL TRANSITION; ORDERS OF MAGNITUDE; TEMPERATURE DECREASE; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; VOLTAGE-CONTROLLED;

ALUMINUM; CONDUCTION BANDS; DEFECTS; DIODES; ELECTROLUMINESCENCE; ELECTRON EMISSION; ELECTRON MOBILITY; HETEROJUNCTIONS; OXYGEN; OXYGEN VACANCIES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 78649235730 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3504220 Document Type: Article

Times cited : (23)

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