Planar nanogap electrodes by direct nanotransfer printing

Small

Volumn 5, Issue 5, 2009, Pages 579-582

  Strobel, Sebastian ^b   Harrer, Stefan ^c   Blanco, Guillermo Penso ^c   Scarpa, Giuseppe ^c   Abstreiter, Gerhard ^b   Lugli, Paolo ^c   Tornow, Marc ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

^c TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

Heterostructures; Molecular electronics; Nanogap electrodes; Nanotransfer printing

Indexed keywords

CRYSTAL GROWTH; CRYSTALS; DEIONIZED WATER; ELECTRODES; HETEROJUNCTIONS; MICROMETERS; MOLDS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MOLECULAR ELECTRONICS; PRINTING; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; THICKNESS MEASUREMENT;

GAAS; GAAS SUBSTRATES; HETEROSTRUCTURE; HETEROSTRUCTURES; HIGH RESOLUTIONS; MOLECULAR-BEAM EPITAXIES; NANOGAP ELECTRODES; NANOTRANSFER PRINTING; NANOTRANSFER PRINTINGS (NTP); SELECTIVE ETCHINGS; SEM; SILICON SUBSTRATES; SINGLE-CRYSTALLINE; SUPPORT STRUCTURES;

GALLIUM ALLOYS;

NANOMATERIAL;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; EQUIPMENT; EQUIPMENT DESIGN; EVALUATION; INSTRUMENTATION; MATERIALS TESTING; METHODOLOGY; MICROELECTRODE; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; MICROELECTRODES; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTIES;

EID: 62749115218     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200801400     Document Type: Article

References (35)

1. ITRS, The International Technology Roadmap for Semiconductors. http://www.itrs.net/.
2. H. Park, A. K. L. Lim, A. P. Alivisatos, J. Park, P. L. McEuen, Appl. Phys. Lett. 1999, 75(2), 301-303.
3. S. I. Khondaker, Z. Yao, Appl. Phys. Lett. 2002, 81, 4613-4615.
4. Y. Noguchi, T. Nagase, T. Kubota, T. Kamikado, S. Mashiko, Thin Solid Films 2006, 499, 90-94.
5. A. F. Morpurgo, C. M. Marcus, D. B. Robinson, Appl. Phys. Lett. 1999, 74, 2084-2086.
6. Y. V. Kervennic, H. S. J. Van der Zant, A. F. Morpurgo, L. Gurevich, L. P. Kouwenhoven, Appl. Phys. Lett. 2002, 80, 321-323.
7. Y. V. Kervennic, D. Vanmaekelbergh, L. P. Kouwenhoven, H. S. J. Van der Zant, Appl. Phys. Lett. 2003, 83, 3782-3784.
8. K. Liu, P. Avouris, J. Bucchignano, R. Martel, S. Sun, J. Michl, Appl. Phys. Lett. 2002, 80, 865-867.
9. M. S. M. Saifullah, T. Ondarcuhu, D. K. Koltsov, C. Joachim, M. E. Weiland, Nanotechnology 2002, 13, 659-662.
10. T. Dadosh, Y. Gordin, R. Krahne, I. Khivrlch, D. Mahalu, V. Frydman, J. Sperling, A. Yacoby, I. Bar-Joseph, Nature 2005, 436, 677-680.
11. J. S. Na, J. Ayres, K. L Chandra, C. Chu, C. B. Gorman, G. N. Parsons, Nanotechnology 2007, 18, 8.
12. J. O. Lee, G. Lientschnig, F. Wiertz, M. Struijk, R. A. J. Janssen, R. Egberink, D. N. Reinhoudt, P. Hadley, C. Dekker, Nano Lett. 2003, 3, 113-117.
13. S. Kubatkln, A. Danilov, M. Hjort, J. Cornil, J. L. Bredas, N. Stuhr-Hansen, P. Hedegard, T. Bjornholm, Nature 2003, 425, 698-701.
14. A. Fursina, S. Lee, R. G. S. Sofin, I. V. Shvets, D. Natelson, Appl. Phys. Lett. 2008, 92, 3.
15. H. B. Akkerman, P. W. M. Blom, D. M. de Leeuw, B. de Boer, Nature 2006, 441, 69-72.
16. Y. L. Loo, D. V. Lang, J. A. Rogers, J. W. P. Hsu, Nano Lett. 2003, 3, 913-917.
17. J. Zaumseil, M. A. Meitl, J. W. P. Hsu, B. R.Acharya, K. W. Baldwin, Y. L. Loo, J. A. Rogers, Nano Lett. 2003, 3, 1223-1227.
18. D. Y. Jang, Y. P. Kim, H. S. Kim, S. H. K. Park, S. Y. Choi, Y. K. Chol, J. Vac. Sci. Technol. B 2007, 25, 443-447.
19. C. Zhou, M. R. Deshpande, M. A. Reed, L. Jones, J. M. Tour, Appl. Phys. Lett. 1997, 71, 611-613.
20. J. Berg, F. Che, P. Lundgren, P. Enoksson, S. Bengtsson, Nanotechnology 2005, 16, 2197-2202.
21. S. M. Dirk, S. W. Howell, S. Zmuda, K. Childs, M. Blain, R. J. Simonson, D. R. Wheeler, Nanotechnology 2005, 16, 1983-1985.
22. R. Krahne, A. Yacoby, H. Shtrikman, I. Bar-Joseph, T. Dadosh, J. Sperling, Appl. Phys. Lett. 2002, 81, 730-732.
23. S. M. Luber, S. Strobel, H. P. Tranitz, W. Wegscheider, D. Schuh, M. Tornow, Nanotechnology 2005, 16, 1182-1185.
24. S. M. Luber, F. Zhang, S. Lingitz, A. G. Hansen, F. Scheliga, E. Thorn-Csanyi, M. Bichler, M. Tornow, Small 2007, 3, 285-289.
25. S. Strobel, K. Arinaga, A. Hansen, M. Tornow, Nanotechnology 2007, 18, 295201.
26. S. Strobel, R. M. Hernández, A. G. Hansen, M. Tornow, J. Phys. Cond. Matt. 2008, 20, 374126.
27. S. W. Howell, S. M. Dirk, K. Childs, H. Pang, M. Blain, R. J. Simonson, J. M. Tour, D. R. Wheeler, Nanotechnology 2005, 16, 754-758.
28. M. D. Austin, W. Zhang, H. Ge, D. Wasserman, S. A. Lyon, S. Y. Chou, Nanotechnology 2005, 16, 1058-1061.
29. P. Lugli, S. Harrer, S. Strobel, F. Brunetti, G. Scarpa, M. Tornow, G. Abstreiter, Proc. 7th IEEE Conf. Nanotechnol. IEEE-NANO-2007, 2007, 1179-1184.
30. S. Harrer, S. Strobel, G. Scarpa, G. Abstreiter, M. Tornow, P. Lugli, IEEE Trans. Nanotechnol. 2008, 7, 363-370.
31. N. A. Melosh, A. Boukai, F. Diana, B. Gerardot, A. Badolato, P. M. Petroff, J. R. Heath, Science 2003, 300, 112-115.
32. Y. L. Loo, R. L Willett, K. W. Baldwin, J. A. Rogers, Appl. Phys. Lett. 2002, 81, 562-564.
33. Alternatively, the electrodes may already be laterally structured during the transfer step by either partitioning the mold or the substrate beforehand: S. Harrer, S. Strobel, G. Scarpa, G. Abstreiter, M. Tornow, P. Lugli, unpublished results.
34. M. Nakamura, T. Aoki, Y. Hatanaka, D. Korzec, J. Engemann, J. Mater. Res. 2001, 16, 621-626.
35. Y. L. Loo, R. L. Willett, K. W. Baldwin, J. A. Rogers, J. Am. Chem. Soc. 2002, 124, 7654-7655.