Temperature-dependent Fowler-Nordheim tunneling and a compensation effect in anodized Al-Al 2O 3-Au diodes

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Hickmott, T W ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARRHENIUS EQUATION; COMPENSATION EFFECTS; FOWLER-NORDHEIM (FN) TUNNELING; PHOTORESPONSE MEASUREMENTS;

ALUMINA; ALUMINUM ALLOYS; ANODIC OXIDATION; BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ELECTROLYTES; ELECTRON TUNNELING; EVAPORATION; MATHEMATICAL MODELS; PHOTOCURRENTS; THERMAL EFFECTS;

ELECTRON TUBE DIODES;

EID: 20944432118     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1897490     Document Type: Article

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