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Volumn 517, Issue 5, 2009, Pages 1815-1820
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Hysteresis in metal insulator semiconductor structures with high temperature annealed ZrO2/SiOx layers
a
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Author keywords
Annealing; Electrical properties and measurements; High k dielectrics; Metal insulator semiconductor devices; Sputtering; Thin films; Zirconia
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Indexed keywords
ADMINISTRATIVE DATA PROCESSING;
ALUMINA;
CAPACITANCE;
CAPACITORS;
CHARGE TRAPPING;
DIELECTRIC DEVICES;
DIELECTRIC MATERIALS;
ELASTICITY;
ELECTRIC CONDUCTIVITY;
ELECTRIC EQUIPMENT;
ELECTRIC FIELDS;
ELECTRIC PROPERTIES;
GATE DIELECTRICS;
GATES (TRANSISTOR);
HYSTERESIS;
LEAKAGE CURRENTS;
METAL INSULATOR BOUNDARIES;
METALS;
MIM DEVICES;
MIS DEVICES;
MISFET DEVICES;
OXYGEN;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR DEVICES;
SEMICONDUCTOR INSULATOR BOUNDARIES;
SEMICONDUCTOR MATERIALS;
SILICA;
SILICON;
SILICON COMPOUNDS;
STRUCTURAL METALS;
SWITCHING CIRCUITS;
THICK FILMS;
TRANSISTORS;
ZIRCONIA;
ZIRCONIUM;
ZIRCONIUM ALLOYS;
ALUMINUM GATES;
APPLIED STRESSES;
CHARGING/DISCHARGING;
CURRENT COMPONENTS;
ELECTRICAL PROPERTIES AND MEASUREMENTS;
GATE INSULATORS;
HIGH ELECTRIC FIELDS;
HIGH FREQUENCIES;
HIGH TEMPERATURES;
HIGH-K DIELECTRICS;
LOW FIELDS;
METAL INSULATORS;
SEMI-CONDUCTORS;
SEMICONDUCTOR FIELD EFFECTS;
SEMICONDUCTOR STRUCTURES;
SILICON OXIDES;
SILICON SUBSTRATES;
STACK STRUCTURES;
TRANSIENT CURRENTS;
TUNNELING CURRENTS;
FIELD EFFECT TRANSISTORS;
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EID: 56949096492
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2008.10.010 Document Type: Article |
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Times cited : (11)
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References (28)
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