High-performance carbon nanotube field effect transistors with a thin gate dielectric based on a self-assembled monolayer

Nano Letters

Volumn 7, Issue 1, 2007, Pages 22-27

  Weitz, Ralf Thomas ^a   Zschieschang, Ute ^a   Effenberger, Franz ^b   Klauk, Hagen ^a   Burghard, Marko ^a   Kern, Klaus ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HYSTERESIS; MONOLAYERS; SELF ASSEMBLY; TRANSCONDUCTANCE;

DEVICE PERFORMANCE; FLEXIBLE ELECTRONICS; GATE DIELECTRICS; SUBTHRESHOLD SWING;

FIELD EFFECT TRANSISTORS;

CARBON NANOTUBE; SILICON DIOXIDE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; ELECTRICITY;

ELECTRICITY; MICROSCOPY, ATOMIC FORCE; NANOTUBES, CARBON; SILICON DIOXIDE;

EID: 33846891341     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl061534m     Document Type: Review

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