Investigation of the anisotropic strain relaxation in GaSb islands on GaP

Journal of Applied Physics

Volumn 110, Issue 4, 2011, Pages

  Wang, Y ^a   Ruterana, P ^a   Lei, H P ^a   Chen, J ^b   Kret, S ^c   El Kazzi, S ^d   Desplanque, L ^d   Wallart, X ^d  

^a Direction de la Recherche Fondamentale   (France)

^b UNIVERSITÉ DE CAEN   (France)

^c INSTITUTE OF PHYSICS   (Poland)

^d INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

[110] DIRECTION; ANISOTROPIC STRAIN RELAXATION; DISLOCATION CONFIGURATIONS; FORMATION ENERGIES; FRINGE ANALYSIS; GAP SUBSTRATES; INITIAL STAGES; LINE DENSITY; MISFIT STRAIN RELAXATION; MOLECULAR DYNAMICS SIMULATIONS; SHUFFLE SET; STRAIN RELIEF; TWO DIRECTIONS;

ANISOTROPY; GALLIUM; HETEROJUNCTIONS; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LANTHANUM COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; STRAIN RELAXATION; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 80052395739     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3622321     Document Type: Article

References (42)

1. B. R. Bennett, R. Magno, J. B. Boos, W. Kruppa, and M. G. Ancona, Solid-State Electron. 49, 1875 (2005). 10.1016/j.sse.2005.09.008
2. B. R. Bennett, Appl. Phys. Lett. 77, 3736 (1998). 10.1063/1.122878
3. S. El Kazzi, L. Desplanque, C. Coinon, Y. Wang, P. Ruterana, and X. Wallart, Appl. Phys. Lett. 97, 192111 (2010). 10.1063/1.3515867
4. B. R. Bennett and J. A. del Alamo, Appl. Phys. Lett. 58, 2979 (1991). 10.1063/1.104687
5. M. Sugisaki, H. W. Ren, S. V. Nair, E. Tokunaga, K. Nishi, Y. Masumoto, and H. E. Ruda, Phys. Rev. B 75, 125315 (2007). 10.1103/PhysRevB.75.125315
6. S. Lohr, S. Mendach, T. Vonau, Ch. Heyn, and W. Hansen, Phys. Rev. B 67, 045309 (2003). 10.1103/PhysRevB.67.045309
7. A. Vila, A. Cornet, J. R. Morante, P. Ruterana, M. Loubradou, R. Bonnet, Y. Gonzalez, and L. Gonzalez, Philos. Mag. A 71, 85 (1995). 10.1080/ 01418619508242957
8. A. Vila, A. Cornet, J. R. Morante, P. Ruterana, M. Loubradou, R. Bonnet, J. Appl. Phys. 79, 676 (1996). 10.1063/1.360812
9. H. Suzuki, T. Sasaki, A. Sai, Y. Ohshita, I. Kamiya, M. Yamaguchi, M. Takahasi, and S. Fujikawa, Appl. Phys. Lett. 97, 041906 (2001). 10.1063/1.3458695
10. O. Yastrubchak, T. Wosinski, J. Z. Domagala, E. Lusakowska, T. Figielski, B. Pecz, and A. L. Toth, J. Phys.: Condens. Matter 16, S1 (2004). 10.1088/0953-8984/16/2/001
11. R. E. Mallard, P. R. Wilshaw, N. J. Mason, P. J. Walker, and G. R. Booker, Inst. Phys. Conf. Ser. 100, 331 (1989).
12. Y. Wang, P. Ruterana, L. Desplanque, S. El Kazzi, and X. Wallart, J. Appl. Phys. 109, 023509 (2011). 10.1063/1.3532053
13. J. Narayan and S. Oktyabrsky, J. Appl. Phys. 92, 7122 (2002). 10.1063/1.1521789
14. Q. H. Xie, A. Madhukar, P. Chen, and N. P. Kobayashi, Phys. Rev. Lett. 75, 2542 (1995). 10.1103/PhysRevLett.75.2542
15. Z. M. Wang, S. L. Feng, X. P. Yang, Z. D. Liu, Z. Y. Xu. H. Z. Zheng, F. L. Wang, P. D. Han, and X. F. Duan, J. Cryst. Growth 192, 79 (1998). 10.1016/S0022-0248(98)00390-X
16. J. C. P. Chang, T. P. Chin, and J. M. Woodall, Appl. Phys. Lett. 69, 981 (1996). 10.1063/1.117102
17. H. Chen, L. C. Cai, C. L. Bao, J. H. Li, Q. Huang, and J. M. Zhou, J. Cryst. Growth 208, 795 (2000). 10.1016/S0022-0248(99)00433-9
18. F. H. Stillinger and T. A. Weber, Phys. Rev. B 31, 5262 (1985). 10.1103/PhysRevB.31.5262
19. W. Qian, M. Skowronski, R. Kaspi, M. De Graef, and V. P. Dravid, J. Appl. Phys. 81, 7268 (1997). 10.1063/1.365324
20. S. H. Huang, G. Balakrishnan, and D. L. Huffaker, J. Appl. Phys. 105, 103104 (2009). 10.1063/1.3129562
21. E. Steimetz, F. Schienle, J.-T. Zettler, and W. Richer, J. Cryst. Growth 170, 208 (1997). 10.1016/S0022-0248(96)00630-6
22. G. D. Li, C. Jiang, Q. S. Zhu, and H. Sakaki, Appl. Phys. Lett. 98, 032103 (2011). 10.1063/1.3541882
23. B. M. Kinder and E. M. Goldys, Appl. Phys. Lett. 73, 1233 (1998). 10.1063/1.122137
24. J. C. Jiang, E. I. Meletis, Z. Yuan, and C. L. Chen, Appl. Phys. Lett. 90, 051904 (2007). 10.1063/1.2436631
25. A. Rocher, A. Ponchet, S. Blanc, and C. Fontaine, Appl. Surf. Sci. 188, 55 (2002). 10.1016/S0169-4332(01)00728-0
26. Th. Kehagias, Ph. Komninou, G. Nouet, P. Ruterana, and Th. Karakostas, Phys. Rev. B 64, 195329 (2001). 10.1103/PhysRevB.64.195329
27. M. J. Hytch, E. Snoek, and R. Kilaas, Ultramicroscopy 74, 131 (1998). 10.1016/S0304-3991(98)00035-7
28. S. Kret, P. Ruterana, A. Rosenauer, and D. Gerthsen, Phys. Status Solidi B 227, 247 (2001). 10.1002/1521-3951(200109)227:1<>1.0.CO;2-K
29. N. Aichoune, V. Potin, P. Ruterana, A. Hairie, G. Nouet, and E. Paumier, Comput. Mater. Sci. 17, 380 (2000). 10.1016/S0927-0256(00)00056-2
30. P. Ruterana, B. Barbaray, A. Béré, P. Vermaut, A. Hairie, E. Paumier, G. Nouet, A. Salvador, A. Botchkarev, and H. Morko, Phys. Rev. B 59, 15917 (1999). 10.1103/PhysRevB.59.15917
31. M. Iichimura, Phys. Status Solidi A 153, 431 (1996). 10.1002/pssa.v153:2
32. Z. Q. Wang and D. Stroud, Phys. Rev. B 42, 5353 (1990). 10.1103/PhysRevB.42.5353
33. X. Zhou, J. Zhao, X. Chen, and W. Lu, Phys. Rev. A 72, 053203 (2005). 10.1103/PhysRevA.72.053203
34. H. P. Lei, J. Chen, and P. Ruterana, J. Appl. Phys. 108, 103503 (2010). 10.1063/1.3509147
35. J. Hornstra, J. Phys. Chem. Solids 5, 129 (1958). 10.1016/0022-3697(58) 90138-0
36. R. France, A. J. Patk, C.-S. Jiang, and S. P. Ahrenkiel, J. Appl. Phys. 107, 103530 (2010). 10.1063/1.3361533
37. I. Yonenaga and K. Sumino, J. Cryst. Growth 126, 19 (1993). 10.1016/0022-0248(93)90223-J
38. P. J. van der Wel, J. te Nijenhuis, E. R. H. van Eck, and L. J. Giling, Semicond. Sci. Technol. 7, A63 (1992). 10.1088/0268-1242/7/1A/012
39. L. Gelczuk, J. Serafinczuk, M. Dabrowska, and P. Dluzewski, J. Cryst. Growth 310, 3014 (1993). 10.1016/j.jcrysgro.2008.03.003
40. P. J. Parbrook, B. K. Tanner, B. Lunm, J. H. C. Hogg, A. M. Keir, and A. D. Johnson, Appl. Phys. Lett. 81, 2773 (2002). 10.1063/1.1513181
41. W. M. Lomer, Philos. Mag. 42, 1327 (1951).
42. S. Oktyabrsky and J. Narayan, MRS Proc. 399, 443 (1996). 10.1557/PROC-399-443