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Journal of Applied Physics

Volumn 105, Issue 10, 2009, Pages

Interfacial misfit array formation for GaSb growth on GaAs

(3) Huang, Shenghong a Balakrishnan, Ganesh a Huffaker, Diana L b

a UNIVERSITY OF NEW MEXICO (United States)

b UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

[110] DIRECTION; ARRAY FORMATION; DISLOCATION ARRAYS; GAAS; GAAS(001); GASB/GAAS; GROWTH CONDITIONS; GROWTH DIRECTIONS; GROWTH MODES; INTERFACIAL MISFIT; SCANNING TRANSMISSION ELECTRON MICROSCOPY; THREADING DISLOCATION DENSITIES;

ELECTRON MICROSCOPES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SINGLE CRYSTALS; STRAIN CONTROL; STRAIN RELAXATION; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 66549085229 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3129562 Document Type: Article

Times cited : (94)

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