Stillinger-Weber potentials for III-V compound semiconductors and their application to the critical thickness calculation for InAs/GaAs

Physica Status Solidi (A) Applied Research

Volumn 153, Issue 2, 1996, Pages 431-437

  Ichimura, M ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELASTICITY; LATTICE CONSTANTS; NUCLEATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

EDGE DISLOCATION; KEATING POTENTIALS; MISFIT DISLOCATION NUCLEATION; STILLINGER WEBER INTERATOMIC POTENTIALS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030080619     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.2211530217     Document Type: Article

References (15)

1. J. W. MATTHEWS, J. Vacuum Sci. Technol. 12, 126 (1975).
2. V. J. B. TORRES and A. M. STONEHAM, Handbook of Interatomic Potentials, III Semiconductors, King's College, London 1985.
3. F. H. STILLINGER and T. A. WEBER, Phys. Rev. B 31, 5262 (1985).
4. J. TERSOFF, Phys. Rev. B 39, 5566 (1989).
5. C. ROLAND and G. H. GILMER, Phys. Rev. Letters 67, 3188 (1991).
6. A. S. NANDEDKAR and J. NARAYAN, Phil. Mag. A61, 873 (1990).
7. M. MOSTOLLER, M. F. CHISHOLM, and T. KAPLAN, Phys. Rev. Letters 72, 1494 (1994).
8. B. W. DODSON and P. A. TAYLOR, Appl. Phys. Letters 49, 642 (1986).
9. M. ICHIMURA and J. NARAYAN, Phil. Mag. A72, 281 (1995).
10. M. TABUCHI, S. NODA, and A. SASAKI, J. Crystal Growth 115, 169 (1991).
11. P. N. KEATING, Phys. Rev. 145, 637 (1966).
12. R. M. MARTIN, Phys. Rev. B 1, 4005 (1970).
13. K. E. KHOR, T. ITO, and S. DAS SARMA, J. Vacuum Sci Technol. B 8, 669 (1990).
14. H. MUNEKATA, L. L. CHANG, S. C. WORONICK, and Y. H. KAO, J. Crystal Growth 81, 237 (1987).
15. N. GRANDJEAN, J. MASSIES, and V. H. ETGENS, Phys. Rev. Letters 69, 796 (1992).