TEM evaluation of epitaxial strain in III-V semi-conductors: Evidence of coherent and incoherent stress relaxation

Applied Surface Science

Volumn 188, Issue 1-2, 2002, Pages 55-60

  Rocher, André ^a   Ponchet, Anne ^a   Blanc, Stéphanie ^b   Fontaine, Chantal ^b  

^a CEMES CNRS   (France)

^b LAAS CNRS   (France)

Author keywords

Epitaxy; Misfit; Relaxation; Strain; Stress; TEM

Indexed keywords

DISLOCATIONS (CRYSTALS); ELASTICITY; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN; STRESS RELAXATION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL STRAIN; STRAIN RELAXATION;

EPITAXIAL GROWTH;

EID: 0037070644     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00728-0     Document Type: Article

References (10)