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Volumn 399, Issue , 1996, Pages 443-448
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Formation of interfacial dislocations in hetero-epitaxial layers grown in two-dimensional mode
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
FILM GROWTH;
HETEROJUNCTIONS;
INTERFACES (MATERIALS);
SEMICONDUCTING FILMS;
STACKING FAULTS;
STRAIN;
STRESS RELAXATION;
TRANSMISSION ELECTRON MICROSCOPY;
COMPRESSIVE STRAIN;
FILM THICKNESS EFFECT;
GLIDE LIMITED PLASTIC RELAXATION;
HETERO EPITAXIAL LAYERS;
INTERFACIAL DISLOCATIONS;
MISFIT STRAIN;
PAIRING;
TWO DIMENSIONAL GROWTH MODE;
DISLOCATIONS (CRYSTALS);
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EID: 0029701439
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (3)
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References (10)
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