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Journal of Applied Physics

Volumn 79, Issue 2, 1996, Pages 676-681

Structure of 60° dislocations at the GaAs/Si interface

(6) Vila A a Cornet, A a Morante, J R a Ruterana, P b Loubradou, M c Bonnet, R c

a UNIVERSITY OF BARCELONA (Spain)

b LERMAT Laboratoire d'Etude et de Recherche sur les Materiaux (France)

c GRENOBLE INSTITUTE OF TECHNOLOGY (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0344657631 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.360812 Document Type: Article

Times cited : (24)

References (18)

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