Highly anisotropic electron transport in shallow InGaAs heterostructures

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 4, 2003, Pages

  Lohr S ^a   Mendach, S ^a   Vonau, T ^a   Heyn, Ch ^a   Hansen, W ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; GALLIUM ARSENIDE; INDIUM ALUMINUM ARSENIDE; INDIUM ARSENIDE; INDIUM GALLIUM ARSENIDE; UNCLASSIFIED DRUG;

ANISOTROPY; ARTICLE; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; MAGNETISM; SEMICONDUCTOR;

EID: 0037438498     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.045309     Document Type: Article

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