GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP

Applied Physics Letters

Volumn 97, Issue 19, 2010, Pages

  El Kazzi, S ^a   Desplanque, L ^a   Coinon, C ^a   Wang, Y ^b   Ruterana, P ^b   Wallart, X ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b Direction de la Recherche Fondamentale   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLIANT INTERFACES; GAP SUBSTRATES; HETEROSTRUCTURES; HIGH ELECTRON MOBILITY; MISFIT DISLOCATIONS; ROOM TEMPERATURE MOBILITY; SI SUBSTRATES; TWO-DIMENSIONAL PERIODIC ARRAYS;

ELECTRON MOBILITY; EPITAXIAL GROWTH; HETEROJUNCTIONS; SUBSTRATES; SURFACE TREATMENT; TWO DIMENSIONAL;

GALLIUM ALLOYS;

EID: 78249274935     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3515867     Document Type: Article

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