Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayers thickness

Journal of Applied Physics

Volumn 109, Issue 2, 2011, Pages

  Wang, Y ^a   Ruterana, P ^a   Desplanque, L ^b   El Kazzi, S ^b   Wallart, X ^b  

^a UNIVERSITÉ DE CAEN   (France)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC STRUCTURE; AVERAGE DISTANCE; DISLOCATION CORE; GAAS SUBSTRATES; GAAS(001); GASB/GAAS; GEOMETRIC PHASE ANALYSIS; INTERFACE DISLOCATION; INTERFACE LAYER; LOCAL STRAINS; MISFIT DISLOCATIONS; QUANTITATIVE MEASUREMENT; RESIDUAL STRAINS; STRAIN RELIEF; SUBSTRATE SURFACE; SUBSTRATE SURFACE PREPARATION; THREADING DISLOCATION DENSITIES;

GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MONOLAYERS; PHASE INTERFACES; SEMICONDUCTING GALLIUM; SUBSTRATES; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 79551655803     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3532053     Document Type: Article

References (29)

1. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 0021-8979 89, 5815 (2001). 10.1063/1.1368156
2. B. R. Bennett, R. Magno, J. B. Boos, W. Kruppa, and M. G. Ancona, Solid-State Electron. 0038-1101 49, 1875 (2005). 10.1016/j.sse.2005.09.008 (Pubitemid 41691045)
3. S. Huang, G. Balakrishnan, and D. L. Huffaker, J. Appl. Phys. 0021-8979 105, 103104 (2009). 10.1063/1.3129562
4. A. Vila, A. Cornet, J. R. Morante, and P. Ruterana, Inst. Phys. Conf. Ser. 0305-2346 134, 353 (1993).
5. K. -N. Tu, J. W. Mayer, and L. C. Feldman, Electronic Thin Film Science: For Electrical Engineer and Materials Scientist (Macmillan, New York, 1992).
6. P. M. J. Maŕe, J. C. Barbour, J. F. van der Veen, K. L. Kavanagh, C. W. T. Bulle-Lieuwma, and M. P. A. Viegers, J. Appl. Phys. 0021-8979 62, 4413 (1987). 10.1063/1.339078
7. A. Vila, A. Cornet, J. R. Morante, P. Ruterana, R. Bonnet, and M. Loubradou, Inst. Phys. Conf. Ser. 0305-2346 146, 83 (1995).
8. A. Georgakilas, P. Panayotatos, J. Stoemenos, J. -L. Mourrain, and A. Christou, J. Appl. Phys. 0021-8979 71, 2679 (1992). 10.1063/1.351041
9. A. Vil̀, A. Cornet, J. R. Morante, P. Ruterana, M. Loubradou, R. Bonnet, Y. Gonzalez, and L. Gonzalez, Philos. Mag. A 0141-8610 71, 85 (1995). 10.1080/01418619508242957
10. W. Qian, M. Skowronski, R. Kaspi, M. De Graef, and V. P. Dravid, J. Appl. Phys. 0021-8979 81, 7268 (1997). 10.1063/1.365324
11. A. Vil̀, A. Cornet, J. R. Morante, P. Ruterana, M. Loubradou, and R. Bonnet, J. Appl. Phys. 0021-8979 79, 676 (1996). 10.1063/1.360812
12. R. E. Mallard, P. R. Wilshaw, N. J. Mason, P. J. Walker, and G. R. Booker, Inst. Phys. Conf. Ser. 0305-2346 100, 331 (1989).
13. J. -H. Kim, T. -Y. Seong, N. J. Mason, and P. J. Walker, J. Electron. Mater. 0361-5235 27, 466 (1998). 10.1007/s11664-998-0178-0
14. W. Qian, M. Skowronski, and R. Kaspi, J. Electrochem. Soc. 0013-4651 144, 1430 (1997). 10.1149/1.1837606
15. S. H. Huang, G. Balakrishnan, A. Khoshakhlagh, A. Jallipalli, L. R. Dawson, and D. L. Huffaker, Appl. Phys. Lett. 0003-6951 88, 131911 (2006). 10.1063/1.2172742
16. J. M. Yarborough, Y. -Y. Lai, Y. Kaneda, J. Hader, J. V. Moloney, T. J. Rotter, G. Balakrishnan, C. Hains, D. Huffaker, S. W. Koch, and R. Bedford, Appl. Phys. Lett. 0003-6951 95, 081112 (2009). 10.1063/1.3212891
17. K. Akahane, N. Yamamoto, S. -I. Gozu, A. Ueta, and N. Ohtani, J. Cryst. Growth 0022-0248 264, 21 (2004). 10.1016/j.jcrysgro.2003.12.041
18. Y. H. Kim, J. Y. Lee, Y. G. Noh, M. D. Kim, S. M. Cho, Y. J. Kwon, and J. E. Oh, Appl. Phys. Lett. 0003-6951 88, 241907 (2006). 10.1063/1.2209714
19. Y. H. Kim, Y. K. Noh, M. D. Kim, J. E. Oh, and K. S. Chung, Thin Solid Films 0040-6090 518, 2280 (2010). 10.1016/j.tsf.2009.09.120
20. S. J. Brown, M. P. Grimshaw, D. A. Ritchie, and G. A. C. Jones, Appl. Phys. Lett. 0003-6951 69, 1468 (1996). 10.1063/1.116910
21. H. S. Kim, Y. K. Noh, M. D. Kim, Y. J. Kwon, J. E. Oh, Y. H. Kim, J. Y. Lee, S. G. Kim, and K. S. Chung, J. Cryst. Growth 0022-0248 301-302, 230 (2007). 10.1016/j.jcrysgro.2006.11.223 (Pubitemid 46463920)
22. S. H. Huang, G. Balakrishnan, M. Mehta, A. Khoshakhlagh, L. R. Dawson, and D. L. Huffaker, Appl. Phys. Lett. 0003-6951 90, 161902 (2007). 10.1063/1.2723649 (Pubitemid 46644797)
23. B. R. Bennett, P. M. Thibado, M. E. Twigg, E. R. Glaser, R. Magno, B. V. Shanabrook, and L. J. Whitman, J. Vac. Sci. Technol. B 1071-1023 14, 2195 (1996). 10.1116/1.588898
24. A. Rocher and E. Snoeck, Mater. Sci. Eng., B 0921-5107 67, 62 (1999). 10.1016/S0921-5107(99)00210-X (Pubitemid 32082431)
25. M. O. Manasreh, Antimonide Related Strained Layer Heterostructures (Gordon and Breach Science, Amsterdam, 1997), p. 107.
26. M. J. Htch, E. Snoek, and R. Kilaas, Ultramicroscopy 0304-3991 74, 131 (1998). 10.1016/S0304-3991(98)00035-7 (Pubitemid 28488647)
27. S. Kret, P. Ruterana, A. Rosenauer, and D. Gerthsen, Phys. Status Solidi B 0370-1972 227, 247 (2001). 10.1002/1521-3951(200109)227:1<247::AID- PSSB247>3.0.CO;2-F
28. S. Kret, P. Dluzewski, P. Dluzewski, and E. Sobczak, J. Phys.: Condens. Matter 0953-8984 12, 10313 (2000). 10.1088/0953-8984/12/49/334 (Pubitemid 32087337)
29. S. Kret, P. Ruterana, and G. Nouet, J. Phys.: Condens. Matter 0953-8984 12, 10249 (2000). 10.1088/0953-8984/12/49/325 (Pubitemid 32087328)