Effects of growth interruption on self-assembled InAs/GaAs islands

Journal of Crystal Growth

Volumn 192, Issue 1-2, 1998, Pages 97-101

  Wang, Z M ^a,b   Feng, S L ^a   Yang, X P ^a   Lu, Z D ^a   Xu, Z Y ^a   Zheng, H Z ^a   Wang, F L ^b   Han, P D ^b   Duan, X F ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

Growth interruption; InAs GaAs; Islands; MBE; PL

Indexed keywords

DEPOSITION; DISLOCATIONS (CRYSTALS); ELECTRON TRANSPORT PROPERTIES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

GROWTH INTERRUPTION EFFECT; ISLAND; PEAK ENERGY SHIFT; WETTING LAYER;

SEMICONDUCTOR GROWTH;

EID: 0032475013     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00390-X     Document Type: Article

References (13)

1. H. Kitabayashi, T. Waho, J. Crystal Growth 150 (1995) 152.
2. G.S. Solomon, J.A. Trezza, J.S. Harris Jr., Appl. Phys. Lett. 66 (1995) 3161.
3. J. Tersoff, C. Teichert, M.G. Lagally, Phys. Rev. Lett. 76 (1996) 1675.
4. R. Leon, Y. Kim, C. Jagadish, M. Gal, J. Zou, D.J.H. Cockayne, Appl. Phys. Lett. 9 (1996) 1888.
5. J.M. Gerard, J.B. Genin, J. Lefebvre, J.M. Moison, N. Lebouche, F. Barthe, J. Crystal Growth 150 (1995) 351.
6. F. Heinrichsdorff et al., J. Crystal Growth 170 (1997) 568.
7. X.P. Yang, W. Zhang, Z.G. Chen et al. Chin. J. Semicond. 17 (1996) 869.
8. Q. Zhao, S.L. Feng, Z.M. Wang, Chin. J. Semicond, submitted.
9. N. Carlsson, W. Seifert, A. Petersson, P. Castrillo, M.E. Pistol, L. Samuelson, Appl. Phys. Lett. 65 (1994) 3093.
10. Y. Nabetani, Doctoral dissertation, 1996.
11. Y. Sugiyama et al., Jpn. J. Appl. Phys. 35 (1996) 1320.
12. J.M. Gerard, private communication.
13. Y. Chen, J. Washburn, Phys. Rev. Lett. 77 (1996) 4046.