Threading dislocation induced low frequency noise in strained-Si nMOSFETs

IEEE Electron Device Letters

Volumn 26, Issue 9, 2005, Pages 667-669

  Hua, W C ^a   Lee, M H ^b   Chen, P S ^b   Tsai, M J ^b   Liu, Chee W ^a,b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Flicker noise; MOSFET; Strained Si; Threading dislocation

Indexed keywords

DISLOCATIONS (CRYSTALS); MORPHOLOGY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE; STRAIN;

FLICKER NOISE; MODIFIED CARRIER NUMBER FLUCTUATION MODEL; STRAINED SILICON; THREADING DISLOCATION;

MOSFET DEVICES;

EID: 26444520423     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.853672     Document Type: Article

References (13)

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