Si versus Ge for future microelectronics

Thin Solid Films

Volumn 518, Issue 9, 2010, Pages 2301-2306

  Claeys, C ^a,b   Mitard, J ^a   Eneman, G ^a,b,c   Meuris, M ^a   Simoen, E ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c RESEARCH FOUNDATION FLANDERS FWO   (Belgium)

Author keywords

Ge thin films; Ge transistor; High gate dielectrics; Interface passivation; Leakage current; Monolithic integration; Reliability; Tunnel FETs

Indexed keywords

GE THIN FILMS; GE TRANSISTOR; INTERFACE PASSIVATION; MONOLITHIC INTEGRATION; TUNNEL FET;

GATE DIELECTRICS; GATES (TRANSISTOR); LOGIC GATES; MESFET DEVICES; MICROELECTRONICS; MONOLITHIC INTEGRATED CIRCUITS; PASSIVATION; RELIABILITY; THIN FILMS; WIND TUNNELS;

GERMANIUM;

EID: 76049092340     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.08.027     Document Type: Article

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