Influence of dislocations on low frequency noise in nMOSFETs fabricated on tensile strained virtual substrates

AIP Conference Proceedings

Volumn 922, Issue , 2007, Pages 133-136

  Malm, B Gunnar ^a   Von Haartman, Martin ^a   Östling, Mikael ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

1 f noise; dislocation; low frequency noise; strained silicon; virtual substrate

Indexed keywords

EID: 76049106756     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2759652     Document Type: Conference Paper

References (4)

1. W. C. Hua, M. H. Lee, P. S. Chen, S. Maikap, C. W. Liu, and K. M. Chen, "Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs," IEEE Electron Device Letters, vol. 25, pp. 693-695, 2004.
2. E. Simoen, G. Eneman, P. Verheyen, R. Loo, K. De Meyer, and C. Claeys, "Processing aspects in the low-frequency noise of nMOSFETs on strained-silicon substrates," IEEE Transactions on Electron Devices, vol. 53, pp. 1039-1047, 2006.
3. W. C. Hua, M. H. Lee, P. S. Chen, M. J. Tsai, and C. W. Liu, "Threading dislocation induced low frequency noise in strained-Si nMOSFETs," IEEE Electron Device Letters, vol. 26, pp. 667-669, 2005.
4. J. G. Fiorenza, et al., "Investigation of misfit dislocation leakage in supercritical strained silicon MOSFETs," IRPS Proceedings, pp. 493-7, 2004.