Low-frequency noise assessment of the silicon passivation of Ge pMOSFETs

Thin Solid Films

Volumn 518, Issue 9, 2010, Pages 2493-2496

  Simoen, E ^a   Firrincieli, A ^a,b   Leys, F ^a   Loo, R ^a   De Jaeger, B ^a   Mitard, J ^a   Claeys, C ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Gate dielectric traps; Ge transistor; Interface passivation; Low frequency noise; Number fluctuations

Indexed keywords

CARRIER NUMBER FLUCTUATION; CHANNEL LENGTH; GATE STACKS; INTERFACE PASSIVATION; LF NOISE; LINEAR OPERATIONS; LOW-FREQUENCY NOISE; NOISE MECHANISMS; NUMBER FLUCTUATIONS; P-MOSFETS; PASSIVATION LAYER; WEAK INVERSIONS;

GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; MONOLAYERS; MOSFET DEVICES; SPACECRAFT; THERMAL NOISE;

PASSIVATION;

EID: 76049087450     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.128     Document Type: Article

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