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Volumn , Issue , 2008, Pages 33-36

Compound semiconductor as cmos channel material: Déjà vu or new paradigm?

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EID: 64849097956     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2008.4800724     Document Type: Conference Paper
Times cited : (4)

References (6)
  • 4
    • 34248632551 scopus 로고    scopus 로고
    • III-V field-effect transistors for low power digital logic applications
    • S. Datta, "III-V field-effect transistors for low power digital logic applications," Journal of Microelectronic Engineering, Vol. 84, No. 9-10, pp. 2133-2137, 2007
    • (2007) Journal of Microelectronic Engineering , vol.84 , Issue.9-10 , pp. 2133-2137
    • Datta, S.1
  • 5
    • 49149131108 scopus 로고    scopus 로고
    • Heterogeneous Integration of Enhancement Mode InO.7GaO.3As Quantum Well Transistor on Silicon Substrate using Thin (<2 um) Composite Buffer Architecture for High-Speed and Low-voltage (0.5V) Logic Applications
    • Technical Digest, pp, Washington, DC, December 10-12
    • M. K. Hudait, S. Datta, G. Dewey, J. M. Fastenau, J. Kavalieros, W. K. Liu, D. Lubyshev, R. Pillarisetty, M. Radosavljevic and R. Chau, "Heterogeneous Integration of Enhancement Mode InO.7GaO.3As Quantum Well Transistor on Silicon Substrate using Thin (<2 um) Composite Buffer Architecture for High-Speed and Low-voltage (0.5V) Logic Applications," International Electron Devices Meeting (IEDM) Technical Digest, pp. 625-628, Washington, DC, December 10-12, 2007
    • (2007) International Electron Devices Meeting (IEDM) , pp. 625-628
    • Hudait, M.K.1    Datta, S.2    Dewey, G.3    Fastenau, J.M.4    Kavalieros, J.5    Liu, W.K.6    Lubyshev, D.7    Pillarisetty, R.8    Radosavljevic, M.9    Chau, R.10
  • 6
    • 64849097850 scopus 로고    scopus 로고
    • S. Mookerjea and S. Datta Comparative Study of Si, Ge and InAs based Steep Sub Threshold Slope Tunnel Transistors for 0.25V Supply Voltage Logic Applications, accepted for presentation at the Device Research Conference '08, University of California, Santa Barbara.
    • S. Mookerjea and S. Datta "Comparative Study of Si, Ge and InAs based Steep Sub Threshold Slope Tunnel Transistors for 0.25V Supply Voltage Logic Applications," accepted for presentation at the Device Research Conference '08, University of California, Santa Barbara.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.