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1
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33846611741
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85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications
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Washington, DC, December 5-7
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S. Datta, T. Ashley, J. Brask, L. Buckle, M. Doczy, M. Emeny, D. Hayes, K. Hilton, R. Jefferies, T. Martin, T. Phillips, D. Wallis, P. Wilding and R. Chau, "85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications," IEDM Technical Digest, pp. 763-766, Washington, DC, December 5-7, 2005
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(2005)
IEDM Technical Digest
, pp. 763-766
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Datta, S.1
Ashley, T.2
Brask, J.3
Buckle, L.4
Doczy, M.5
Emeny, M.6
Hayes, D.7
Hilton, K.8
Jefferies, R.9
Martin, T.10
Phillips, T.11
Wallis, D.12
Wilding, P.13
Chau, R.14
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2
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35748969089
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Integrated nanoelectronics for the future
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R. Chau, B. Doyle, S. Datta, K. Kavalieros and K. Zhang, "Integrated nanoelectronics for the future," Nature Materials, vol. 6, pp. 810-812, 2007
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(2007)
Nature Materials
, vol.6
, pp. 810-812
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Chau, R.1
Doyle, B.2
Datta, S.3
Kavalieros, K.4
Zhang, K.5
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3
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34547789291
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Ultrahigh-Speed 0.5 V Supply Voltage InO.7GaO.3As Quantum-Well Transistors on Silicon Substrate
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S. Datta, G. Dewey, J. M. Fastenau, M. K. Hudait, D. Loubychev, W. K. Liu, M. Radosavljevic, W. Rachmady and R. Chau, "Ultrahigh-Speed 0.5 V Supply Voltage InO.7GaO.3As Quantum-Well Transistors on Silicon Substrate," IEEE Electron Device Letters, Vol. 28, No. 8, pp. 685, 2007.
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(2007)
IEEE Electron Device Letters
, vol.28
, Issue.8
, pp. 685
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Datta, S.1
Dewey, G.2
Fastenau, J.M.3
Hudait, M.K.4
Loubychev, D.5
Liu, W.K.6
Radosavljevic, M.7
Rachmady, W.8
Chau, R.9
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4
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34248632551
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III-V field-effect transistors for low power digital logic applications
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S. Datta, "III-V field-effect transistors for low power digital logic applications," Journal of Microelectronic Engineering, Vol. 84, No. 9-10, pp. 2133-2137, 2007
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(2007)
Journal of Microelectronic Engineering
, vol.84
, Issue.9-10
, pp. 2133-2137
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Datta, S.1
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5
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49149131108
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Heterogeneous Integration of Enhancement Mode InO.7GaO.3As Quantum Well Transistor on Silicon Substrate using Thin (<2 um) Composite Buffer Architecture for High-Speed and Low-voltage (0.5V) Logic Applications
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Technical Digest, pp, Washington, DC, December 10-12
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M. K. Hudait, S. Datta, G. Dewey, J. M. Fastenau, J. Kavalieros, W. K. Liu, D. Lubyshev, R. Pillarisetty, M. Radosavljevic and R. Chau, "Heterogeneous Integration of Enhancement Mode InO.7GaO.3As Quantum Well Transistor on Silicon Substrate using Thin (<2 um) Composite Buffer Architecture for High-Speed and Low-voltage (0.5V) Logic Applications," International Electron Devices Meeting (IEDM) Technical Digest, pp. 625-628, Washington, DC, December 10-12, 2007
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(2007)
International Electron Devices Meeting (IEDM)
, pp. 625-628
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Hudait, M.K.1
Datta, S.2
Dewey, G.3
Fastenau, J.M.4
Kavalieros, J.5
Liu, W.K.6
Lubyshev, D.7
Pillarisetty, R.8
Radosavljevic, M.9
Chau, R.10
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6
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64849097850
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S. Mookerjea and S. Datta Comparative Study of Si, Ge and InAs based Steep Sub Threshold Slope Tunnel Transistors for 0.25V Supply Voltage Logic Applications, accepted for presentation at the Device Research Conference '08, University of California, Santa Barbara.
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S. Mookerjea and S. Datta "Comparative Study of Si, Ge and InAs based Steep Sub Threshold Slope Tunnel Transistors for 0.25V Supply Voltage Logic Applications," accepted for presentation at the Device Research Conference '08, University of California, Santa Barbara.
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