Factors enhancing In0.7Ga0.3As MOSFETs and tunneling FETs device performance

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2010, Pages 63-64

  Zhao, H ^a   Goel, N ^b   Huang, J ^a   Chen, Y ^a   Yum, J ^a   Wang, Y ^a   Zhou, F ^a   Xue, F ^a   Lee, J ^a  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE PERFORMANCE; HIGH DENSITY; IN-SITU; KEY FACTORS; MOSFETS; ON-CURRENTS; QUANTUM WELL; SUBTHRESHOLD SWING; TUNNELING FET;

MESFET DEVICES; MOSFET DEVICES;

GALLIUM;

EID: 77957584764     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2010.5551938     Document Type: Conference Paper

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