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Volumn 85, Issue 12, 2008, Pages 2346-2349

Thermal stress effects of Ge2Sb2Te5 phase change material: Irreversible modification with Ti adhesion layers and segregation of Te

Author keywords

Ge2Sb2Te5; Phase change material; Stress; Ti

Indexed keywords

ADHESION; ATOMIC PHYSICS; ATOMS; BUOYANCY; EPITAXIAL GROWTH; GERMANIUM; LIFE CYCLE; PHASE INTERFACES; PHASE SEPARATION; SEGREGATION (METALLOGRAPHY); TELLURIUM COMPOUNDS;

EID: 56649095817     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.09.009     Document Type: Article
Times cited : (26)

References (17)
  • 1
    • 0036227050 scopus 로고    scopus 로고
    • M. Gill, T. Lowrey, J. Park, in: Proceedings of the 2002 IEEE International Solid State Circuits Conference, vol. 2, IEEE, New York, 2002, p. 158.
    • M. Gill, T. Lowrey, J. Park, in: Proceedings of the 2002 IEEE International Solid State Circuits Conference, vol. 2, IEEE, New York, 2002, p. 158.
  • 2
    • 28144436568 scopus 로고    scopus 로고
    • K. Kim, G. Jeong, in: Proceedings of the 2005 IEEE International Solid State Circuits Conference, IEEE, New York, 2005, p. 576.
    • K. Kim, G. Jeong, in: Proceedings of the 2005 IEEE International Solid State Circuits Conference, IEEE, New York, 2005, p. 576.
  • 10
    • 56649102813 scopus 로고    scopus 로고
    • S. Lai, in: Proceedings of the 2003 IEEE International Electron Devices Meeting, IEEE, New York, 2003, p. 255.
    • S. Lai, in: Proceedings of the 2003 IEEE International Electron Devices Meeting, IEEE, New York, 2003, p. 255.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.