Ti diffusion in chalcogenides: A ToF-SIMS depth profile characterization approach

Applied Surface Science

Volumn 231-232, Issue , 2004, Pages 821-825

  Alberici, S G ^a   Zonca, R ^a   Pashmakov, B ^b  

^a STMICROELECTRONICS   (Italy)

^b Energy Conversion Devices Inc   (United States)

Author keywords

Chalcogenides; Depth profiling; Tellurium; Titanium; ToF SIMS

Indexed keywords

ANNEALING; COMPOSITION; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; MASS SPECTROMETRY; PHASE TRANSITIONS; TITANIUM;

DEPTH PROFILING; NON-VOLATILE MEMORIES (NVM); PHASE-CHANGE MEMORIES (PCM);

GERMANIUM COMPOUNDS;

EID: 2942593996     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.129     Document Type: Conference Paper

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