Characterization of phase change memory materials using phase change bridge devices

Journal of Applied Physics

Volumn 106, Issue 5, 2009, Pages

  Krebs, Daniel ^a   Raoux, Simone ^b   Rettner, Charles T ^b   Burr, Geoffrey W ^b   Shelby, Robert M ^b   Salinga, Martin ^a   Jefferson, C Michael ^b   Wuttig, Matthias ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE DEVICES; AMORPHOUS STATE; CURRENT PULSE; DEVICE OPERATIONS; LASER EXPERIMENTS; MATERIAL PARAMETER; MATERIAL TESTS; NON-VOLATILE MEMORY APPLICATION; OPTICAL EXPERIMENTS; PHASE CHANGE; PHASE CHANGE RANDOM ACCESS MEMORY; SWITCHING SPEED;

ELECTRONIC EQUIPMENT TESTING; EXTRACTION; MATERIALS PROPERTIES; RANDOM ACCESS STORAGE;

PHASE CHANGE MEMORY;

EID: 70349317377     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3183952     Document Type: Article

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