SCOPUS 정보 검색 플랫폼

Volumn 158, Issue 10, 2011, Pages

Fabrication of SiO2/SiOx/SiOxNy non-volatile memory with transparent amorphous indium gallium zinc oxide channels

(7) Nguyen, Hong Hanh a Nguyen, Van Duy a Trinh, Thanh Thuy a Jang, Kyungsoo a Baek, Kyunghyun a Raja, Jayapal a Yi, Junsin a

a Sungkyunkwan University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; GAS-FLOW RATIO; GATE INSULATOR; INDIUM GALLIUM ZINC OXIDES; LOW TEMPERATURES; LOW-TEMPERATURE DEPOSITION; MEMORY PROPERTIES; NON-VOLATILE MEMORIES; OPTIMAL CONDITIONS; PLASTIC SUBSTRATES; THRESHOLD VOLTAGE SHIFTS; TRANSPARENT PROPERTIES;

AMORPHOUS FILMS; DISPLAY DEVICES; ELECTRIC PROPERTIES; FLEXIBLE DISPLAYS; GALLIUM; OXIDE FILMS; THRESHOLD VOLTAGE; TREES (MATHEMATICS); ZINC OXIDE;

SILICON COMPOUNDS;

EID: 80052082465 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3624573 Document Type: Article

Times cited : (25)

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