Embedded NVM devices with solid-phase crystallized poly-Si film on a glass substrate for system-on-panel applications

Journal of the Electrochemical Society

Volumn 156, Issue 10, 2009, Pages

  Jung, Sungwook ^a   Nga, Nguyen Thanh ^a   Jang, Kyungsoo ^a   Kim, Doyoung ^b   Choi, Byoungdeog ^a   Mo, Yeongon ^c   Lee, Kiyong ^c   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c Samsung SDI   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE; DISPLAY PANELS; DISPLAY SYSTEM; FLAT-PANEL DISPLAY; GLASS PANELS; GLASS SUBSTRATES; LOW OPERATING VOLTAGE; LOW TEMPERATURE METHOD; MEMORY BLOCKS; MEMORY WINDOW; NONVOLATILE MEMORY DEVICES; OXYNITRIDATION; OXYNITRIDES; POLY-SI; POLY-SI FILMS; POLY-SI THIN-FILM TRANSISTORS; POLYCRYSTALLINE SILICON (POLY-SI); PROGRAMMING VOLTAGE; RETENTION CHARACTERISTICS; SOLID PHASE CRYSTALLIZATION; SOLID-PHASE; STACK STRUCTURE; SYSTEM ON PANEL; ULTRA-THIN;

APPROXIMATION THEORY; ELECTRIC POTENTIAL; FLAT PANEL DISPLAYS; GLASS; NITRIDES; OXIDE FILMS; THIN FILM TRANSISTORS; WINDOWS;

POLYSILICON;

EID: 69549118599     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3186025     Document Type: Article

References (13)

1. S. D. Brotherton, Semicond. Sci. Technol., 10, 721 (1995).
2. M. Miyasaka and J. Stoemenos, J. Appl. Phys., 86, 5556 (1999).
3. I. Levin, M. Kovler, Y. Roizin, M. Vofsi, R. D. Leapman, G. Goodman, N. Kawada, and M. Funahashi, J. Electrochem. Soc., 151, G833 (2004).
4. M. H. White, D. A. Adams, and J. Bu, IEEE Circuits Devices Mag., 16, 22 (2000).
5. S. I. Hsieh, H. T. Chen, Y. C. Chen, C. L. Chen, and Y. C. King, IEEE Electron Device Lett., 27, 272 (2006).
6. S. C. Chen, T. C. Chang, P. T. Liu, Y. C. Wu, P. H. Yeh, C. F. Weng, S. M. Sze, C. Y. Chang, and C. H. Lien, Appl. Phys. Lett., 90, 122111 (2007).
7. P.-T. Liu, C. S. Huang, and C. W. Chen, Appl. Phys. Lett., 90, 182115 (2007).
8. S. Jung, J. Kim, H. Son, S. Hwang, K. Jang, J. Lee, K. Lee, H. Park, K. Kim, J. Yi, J. Appl. Phys., 102, 094502 (2007).
9. M. Rojas-López, V. L. Gayou, R. E. Ṕrez-Blanco, A. Torres-Jácome, H. Navarro-Conteras, and M. A. Vidal, Thin Solid Films, 445, 32 (2003).
10. D. Han, K. Wang, J. M. Owens, L. Gedvilas, B. Nelson, H. Habuchi, and M. Tanaka, J. Appl. Phys., 93, 3776 (2003).
11. P. Pavan, R. Bez, P. Olivo, and E. Zanoni, Proc. IEEE, 85, 1248 (1997).
12. J. Robertson and M. J. Powell, Appl. Phys. Lett., 44, 415 (1984).
13. J. Robertson, Philos. Mag. B, 63, 47 (1991).