Nanocrystalline-silicon thin-film nonvolatile memory devices for display applications

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 981-983

  Jung, Sungwook ^a   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

FowlerNordheim (FN); nanocrystalline silicon (nc Si); nonvolatile memory (NVM); oxynitridenitrideoxide (OnNO); system on glass (SOG)

Indexed keywords

FOWLER-NORDHEIM; NANOCRYSTALLINES; NON-VOLATILE MEMORIES; OXYNITRIDENITRIDEOXIDE (ONNO); SYSTEM-ON-GLASS;

DISPLAY DEVICES; GATE DIELECTRICS; GATES (TRANSISTOR); GLASS; NONVOLATILE STORAGE; SEMICONDUCTING SILICON COMPOUNDS;

NANOCRYSTALLINE SILICON;

EID: 77956115413     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2053192     Document Type: Article

References (8)

1. 2 interface," in Proc. SID, 2005, pp. 1152-1155.
2. S. I. Hsieh, H. T. Chen, Y. C. Chen, C. L. Chen, and Y. C. King, "MONOS memory in sequential laterally solidified low-temperature poly-Si TFTs," IEEE Electron Device Lett., vol.27, no.4, pp. 272-274, Apr. 2006.
3. S.-C. Chen, T.-C. Chang, P.-T. Liu, Y.-C. Wu, P.-H. Yeh, C.-F. Weng, S. M. Sze, C.-Y. Chang, and C.-H. Lien, "Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels," Appl. Phys. Lett., vol.90, no.12, pp. 1221111-1221113, Mar. 2007.
4. P.-T. Liu, C. S. Huang, and C. W. Chen, "Nonvolatile low-temperature polycrystalline silicon thin-film-transistor memory devices with oxide-nitride-oxide stacks," Appl. Phys. Lett., vol.90, no.18, pp. 1821151-1821153, May 2007.
5. S. Jung, J. Kim, H. Son, K. Jang, J. Cho, K. Kim, B. Choi, and J. Yi, "Embedded LTPS flash cells with oxide-nitride-oxynitride stack structure for realization of multi-function mobile flat panel displays," J. Phys. D, Appl. Phys., vol.41, no.7, pp. 1720061-1720064, Sep. 2008.
6. S. Jung, N. T. Nga, K. Jang, D. Kim, B. Choi, Y. Mo, K. Lee, and J. Yi, "Embedded NVM devices with solid-phase crystallized poly-Si film on a glass substrate for system-on-panel applications," J. Electrochem. Soc., vol.156, no.10, pp. G152-G155, Oct. 2010.
7. C.-H. Lee, A. Sazonov, A. Nathan, and J. Robertson, "Directly deposited nanocrystalline silicon thin-film transistors with ultra high mobilities," Appl. Phys. Lett., vol.89, no.25, pp. 2521011-2521013, Dec. 2006.
8. S. Sriraman, S. Agarwal, E. S. Aydil, and D. Marouklas, "Mechanism of hydrogen-induced crystallization of amorphous silicon," Nature, vol.418, no.6893, pp. 62-65, Jul. 2002.