A nonvolatile InGaZnO charge-trapping-engineered flash memory with good retention characteristics

IEEE Electron Device Letters

Volumn 31, Issue 3, 2010, Pages 201-203

  Su, Nai Chao ^a   Wang, Shui Jinn ^a   Chin, Albert ^b,c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c Nano Electronics Consortium of Taiwan   (Taiwan)

Author keywords

Charge trapping engineered Flash (CTEF); High ; InGaZnO; Metal oxide nitride oxide semiconductor (MONOS); Nonvolatile memory (NVM)

Indexed keywords

CHARGE TRAP; ENGINEERED STRUCTURES; INDIUM GALLIUM ZINC OXIDES; MEMORY WINDOW; METAL-OXIDE; NON-VOLATILE; NON-VOLATILE MEMORIES; PROGRAM/ERASE; RETENTION CHARACTERISTICS;

AMORPHOUS FILMS; INDIUM; NITRIDES; THIN FILM TRANSISTORS; ZINC; ZINC OXIDE;

FLASH MEMORY;

EID: 77649153796     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2037986     Document Type: Article

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