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Volumn 43, Issue 7, 2010, Pages
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High performance nonvolatile memory using SiO2/SiO x/SiOxNy stack on excimer laser-annealed polysilicon and the effect of blocking thickness on operation voltage
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Author keywords
[No Author keywords available]
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Indexed keywords
BASE MATERIAL;
CHARGE STORAGE;
CHARGE STORAGE CAPACITY;
LAYER GROWTH;
MEMORY APPLICATIONS;
MEMORY STRUCTURE;
MEMORY WINDOW;
NON-BRIDGING OXYGEN;
NON-VOLATILE MEMORIES;
NONVOLATILE MEMORY DEVICES;
OPERATING VOLTAGE;
OPERATION VOLTAGE;
OXYNITRIDATION;
RETENTION PROPERTIES;
SILICON PHASE;
THRESHOLD VOLTAGE SHIFTS;
AMORPHOUS SILICON;
COMPETITION;
DEFECTS;
EXCIMER LASERS;
GAS LASERS;
OXYGEN;
POLYSILICON;
SILICON COMPOUNDS;
THRESHOLD VOLTAGE;
SILICON OXIDES;
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EID: 76749110776
PISSN: 00223727
EISSN: 13616463
Source Type: Journal
DOI: 10.1088/0022-3727/43/7/075101 Document Type: Article |
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Times cited : (19)
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References (13)
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