DC and RF characterization of AlGaN/GaN HEMTs with different gate recess depths

Solid-State Electronics

Volumn 54, Issue 5, 2010, Pages 582-585

  Lin, Heng Kuang ^a   Huang, Fan Hsiu ^a   Yu, Hsiang Lin ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

AlGaN; GaN; Gate recess; HEMT

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; ALGANGAN; DEVICE PERFORMANCE; DRY ETCHING PROCESS; GATE RECESS; GATE RECESS DEPTHS; INTRINSIC TRANSCONDUCTANCE; RECESS DEPTH; RF CHARACTERIZATION; SMALL-SIGNAL ANALYSIS; SOURCE RESISTANCE;

GALLIUM ALLOYS; GALLIUM NITRIDE; PLASMA ETCHING; SIGNAL ANALYSIS; TRANSCONDUCTANCE; TRANSPORT PROPERTIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77949307075     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.02.001     Document Type: Article

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