Influence of field plates and surface traps on microwave silicon carbide MESFETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 8, 2008, Pages 1875-1879

  Nilsson, Per Åke ^a   Allerstam, Fredrik ^a   Sudow, Mattias ^a   Andersson, Kristoffer ^a   Hjelmgren, Hjelmgren ^a   Sveinbjornsson, Einar Ö ^a   Rorsman, Niklas ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Field plate; MESFETs; Passivation; Silicon carbide (SiC); Surface traps

Indexed keywords

CHARGE TRAPPING; DRAIN CURRENT; ELECTRIC CONDUCTIVITY; IONIZATION OF GASES; MESFET DEVICES; MICROWAVES; MOSFET DEVICES; NONMETALS; SILICON; SILICON CARBIDE;

BREAK DOWN VOLTAGES; CURRENT SLUMP; FIELD PLATE; FIELD PLATES; GATE-DRAIN; INTERFACE TRAP DENSITY; MESFETS; OUTPUT POWER DENSITY; SILICON CARBIDE (SIC); SILICON CARBIDE DEVICES; SURFACE TRAPPING; SURFACE TRAPS;

PASSIVATION;

EID: 49249098295     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.926633     Document Type: Article

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