Extraction of effective trap density and gate length in AlGaN/GaN HEMTs based on pulsed I-Vcharacteristics

2007 International Semiconductor Device Research Symposium, ISDRS

Volumn , Issue , 2007, Pages

  Kim, Hyeongnam ^a   Lu, Wu ^a  

^a The Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 44949146277     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2007.4422463     Document Type: Conference Paper

References (0)