Low-temperature sintering of in-plane self-assembled ZnO nanorods for solution-processed high-performance thin film transistors

Journal of Physical Chemistry C

Volumn 111, Issue 51, 2007, Pages 18831-18835

  Sun, Baoquan ^a,c   Peterson, Rebecca L ^a   Sirringhaus, Henning ^a   Mori, Kiyotaka ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b Cambridge Liaison Office   (United Kingdom)

^c LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL PRECURSOR; SEMICONDUCTOR FILM;

ENERGY GAP; NANORODS; OHMIC CONTACTS; SELF ASSEMBLY; TOXICITY; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 38349171819     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp077740f     Document Type: Article

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