The impact of hydrogen on indium incorporation and surface accumulation in InAlN epitaxy

Journal of Crystal Growth

Volumn 331, Issue 1, 2011, Pages 4-7

  Sadler, Thomas C ^a   Kappers, Menno J ^a   Oliver, Rachel A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

A1. Atomic force microscopy; A1. Surface structure; A3. Metal organic vapour phase epitaxy; B1. Nitrides; B2. Semiconducting indium compounds; B2. Semiconducting ternary compounds

Indexed keywords

A1. ATOMIC FORCE MICROSCOPY; A1. SURFACE STRUCTURE; A3. METAL ORGANIC VAPOUR PHASE EPITAXY; B1. NITRIDES; B2. SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING TERNARY COMPOUNDS;

ATOMIC FORCE MICROSCOPY; HYDROGEN; INDIUM; INDIUM COMPOUNDS; NITRIDES; ORGANOMETALLICS; SEMICONDUCTING INDIUM; SURFACE STRUCTURE; VAPOR PHASE EPITAXY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 80051862643     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.06.051     Document Type: Article

References (24)

1. R. Butte, J.F. Carlin, E. Feltin, M. Gonschorek, S. Nicolay, G. Christmann, D. Simeonov, A. Castiglia, J. Dorsaz, H.J. Buehlmann, S. Christopoulos, G.B.H. von Hogersthal, A.J.D. Grundy, M. Mosca, C. Pinquier, M.A. Py, F. Demangeot, J. Frandon, P.G. Lagoudakis, J.J. Baumberg, and N. Grandjean Current status of AlInN layers lattice-matched to GaN for photonics and electronics J. Phys. D. 40 2007 6328 6344 (Pubitemid 350093020)
2. J.F. Carlin, C. Zellweger, J. Dorsaz, S. Nicolay, G. Christmann, E. Feltin, R. Butte, and N. Grandjean Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials Phys. Status Solidi B 242 2005 2326 2344 (Pubitemid 41335602)
3. I.M. Watson, C. Liu, E. Gu, M.D. Dawson, P.R. Edwards, and R.W. Martin Use of AlInN layers in optical monitoring of growth of GaN-based structures on free-standing GaN substrates Appl. Phys. Lett. 87 2005 151901
4. E. Sillero, D. Lopez-Romero, F. Calle, M. Eickhoff, J.F. Carlin, N. Grandjean, M. Ilegems, Selective etching of AlInN/GaN heterostructures for MEMS technology, Microelectron. Eng., 84 (2007) 1152-1156. (Pubitemid 46678355)
5. M. Higashiwaki, and T. Matsui InAlN/GaN heterostructure field-effect transistors grown by plasma-assisted molecular-beam epitaxy Jpn. J. Appl. Phys. 43 2 2004 L768 L770
6. A. Koukitu, Y. Kumagai, and H. Seki Thermodynamic Analysis of the MOVPE Growth of InAlN Phys. Status Solidi A 180 2000 155
7. S. Fernandez-Garrido, Z. Gacevic, and E. Calleja A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy Appl. Phys. Lett. 93 2008 191907
8. T. Ive, O. Brandt, X. Kong, A. Trampert, and K.H. Ploog Al,In)N layers and (Al,In)N/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on 6HSiC(0001) Phys. Rev. B. 78 2008 035311
9. M. Bosi, and R. Fornari A Sudy on Indium incorpation efficiency in InGaN grown by MOVPE J. Cryst. Growth 265 2004 434 439
10. E.L. Piner, M.K. Behbehani, N.A. ElMasry, F.G. McIntosh, J.C. Roberts, K.S. Boutros, and S.M. Bedair Effect of hydrogen on the indium incorporation in InGaN epitaxial films Appl. Phys. Lett. 70 1997 461 463 (Pubitemid 127663666)
11. E.L. Piner, M.K. Behbehani, N.A. ElMasry, J.C. Roberts, F.G. McIntosh, and S.M. Bedair Impurity dependance on hydrogen and ammonia rates inInGaN bulk films Appl. Phys. Lett. 71 1997 2023 2025 (Pubitemid 127637315)
12. M.E. Vickers, M.J. Kappers, T.M. Smeeton, E.J. Thrush, J.S. Barnard, and C.J. Humphreys Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by X-ray scattering J. Appl. Phys. 94 2003 1565 1574
13. 0.75N surfaces: First-principles calculations Phys. Rev. B 79 2009 041306
14. J.E. Northrup GaN and InGaN (1122) surfaces: group-III adlayers and indium incorporation Appl. Phys. Lett. 95 2009 133107
15. A. Koukitu, T. Taki, N. Takahashi, and H. Seki Thermodynamic study on the role of hydrogen during the MOVPE growth of group III nitrides J. Cryst. Growth 197 1999 99 105
16. A.V. Lobanova, K.M. Mazaev, R.A. Talalaev, M. Leys, S. Boeykens, K. Cheng, and S. Degroote Effect of V/III ratio in AlN and AlGaN MOVPE J. Cryst. Growth 287 2006 601 604 (Pubitemid 43069702)
17. A.G. Bhuiyan, K. Sugita, K. Kasashima, A. Hashimoto, A. Yamamoto, and V.Y. Davydov Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy Appl. Phys. Lett. 83 2003 4788 4790
18. 1-xN epitaxial layers J. Cryst. Growth 311 2009 3380 3385
19. I. Horcas, R. Fernandez, J.M. Gomez-Rodriguez, J. Colchero, J. Gomez-Herrero, and A.M. Baro WSXM: a software for scanning probe microscopy and a tool for nanotechnology Rev. Sci. Instrum. 78 2007 013705
20. 1-xN epilayers grown on GaN Springer Proc. Phys. 120 2007 29 32
21. T.C. Sadler, M.J. Kappers, and R.A. Oliver Investigation of optimum growth conditions of InAlN for application in distributed Bragg reflectors J. Phys.: Conf. Ser. 209 2010 012015
22. M. Schuster, P.O. Gervais, B. Jobst, W. Hosler, R. Averbeck, H. Riechert, A. Iberl, and R. Stommer Determination of the chemical composition of distorted InGaN/GaN heterostructures from X-ray diffraction data J. Phys. D: Appl. Phys. 32 1999 A56 A60
23. A.F. Wright Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN J. Appl. Phys. 82 1997 2833 2839 (Pubitemid 127657611)
24. T.C. Sadler, M.J. Kappers, and R.A. Oliver The effects of varying metal precursor fluxes on the growth of InAlN by metal organic vapour phase epitaxy J. Cryst. Growth 314 2011 13 20