Selective etching of AlInN/GaN heterostructures for MEMS technology

Microelectronic Engineering

Volumn 84, Issue 5-8, 2007, Pages 1152-1156

  Sillero, E ^a   Lopez Romero D ^a   Calle, F ^a   Eickhoff, M ^b   Carlin, J F ^c   Grandjean, N ^c   Ilegems, M ^c  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b WALTER SCHOTTKY INSTITUT   (Germany)

^c EPFL   (Switzerland)

Author keywords

GaN; Harsh environment MEMS; MEMS; Surface micromachining

Indexed keywords

CRYSTAL DEFECTS; DRY ETCHING; HETEROJUNCTIONS; MEMS; SURFACE MICROMACHINING;

ETCHING TECHNOLOGY; HARSH ENVIRONMENT MEMS; SELECTIVE ETCHING;

GALLIUM NITRIDE;

EID: 34247634618     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.01.150     Document Type: Article

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