Improvement in joint reliability of SiC power devices by a diffusion barrier between Au-Ge solder and Cu/Ni(P)-metalized ceramic substrates

Journal of Electronic Materials

Volumn 40, Issue 7, 2011, Pages 1563-1571

  Lang, Fengqun ^a   Yamaguchi, Hiroshi ^a   Ohashi, Hiromichi ^a   Sato, Hiroshi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Au Ge solder; Diffusion barrier; Electrical resistivity; High temperature solders; Interfacial reaction; Joint reliability; Joint strength; SiC power devices

Indexed keywords

AU-GE SOLDER; ELECTRICAL RESISTIVITY; HIGH TEMPERATURE; JOINT RELIABILITY; JOINT STRENGTH; POWER DEVICES;

CERAMIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC EQUIPMENT; ELECTRIC RESISTANCE; EUTECTICS; GERMANIUM; INTERMETALLICS; METALLIZING; PHOSPHORUS; RELIABILITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SOLDERING ALLOYS; SUBSTRATES; TUNGSTEN;

DIFFUSION BARRIERS;

EID: 80051594326     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-011-1661-6     Document Type: Article

References (44)

1. H. Ohashi, IEEJ Trans. IA 122, 168 (2002) (in Japanese).
2. C.E. Weitzel, J.W. Palmour, C.H. Carter, K. Moore, K.J. Nordquist, S. Allen, C. Thero, and M. Bhatnagar, IEEE Trans. Electron Dev. 43, 1732 (1996).
3. K. Shenai, Microelectron. J. 32, 397 (2001).
4. T.F. Zhao, J. Wang, A.Q. Huang, and A. Agarwal, The 2007 IEEE Industry Applications Conference Forty-Second IAS Annual Meeting, p. 331 (2007).
5. H. Morel, D. Bergogne, D. Planson, B. Allard, and R. Meuret, Mater. Sci. Forum 600-603, 925 (2009).
6. K. Takao and T. Shinohe, Toshiba Rev. 64, 44 (2009).
7. S.I. Kinouchi and S. Nakata, Mitsubishi Electric ADVANCE, June, 10 (2010).
8. R. Kirschman, High-Temperature Electronics (IEEE Press, New York, USA, 1999), Part I.
9. S. Ahmed, IEEE Power Electron Specialists Conference Records (IEEE Press, New York, USA, 2008), p. 3184.
10. D. Bergogne, H. Morel, D. Planson, D. Tournier, P. Bevilacqua, B. Allard, R. Meuret, and S. Vieillard, IEEE Power Electron Specialists Conference Records (IEEE Press, New York, USA, 2008), p. 3178.
11. H. Daimon, M. Yamanaka, M. Shinohara, E. Sakuma, and S. Misawa, Appl. Phys. Lett. 51, 2106 (1987).
12. T. Funaki, J.C. Balda, J. Junghans, A.S. Kashyap, H.A. Mantooth, F. Barlow, T. Kimoto, and T. Hikihara, IEEE Trans. Power Electron. 22, 1321 (2007).
13. W.R. Johnson and J. Williams, Mater. Sci. Forum 483-485, 785 (2005).
14. F.P. McCluskey, M. Dash, Z. Wang, and D. Huff, Microelectron. Reliab. 46, 1910 (2006).
15. H. Jonathan and R. Erich, Adv. Microelectron. Jul./Aug., 20 (2008).
16. P. Zheng, A. Wiggins, R.V. Frampton, and S.J. Adam, IMAPS International Conference & Exhibition on High Temperature Electronics (HiTEC 2008), pp. 213-219.
17. R. Kisel and Z. Szczepanski, Microelectron. Reliab. 49, 627 (2009).
18. T. Takahashi, S. Komatsu, H. Nishikawa, and T. Takemoto, J. Electron. Mater. 39, 2274 (2010).
19. T.P.L. Li, E.L. Zigler, and D.E. Hillyer, IEEE/IRPS 169 (1984).
20. S. Tanimoto, K. Matsui, Y. Murakami, H. Yamaguchi, and H. Okumura, IMAPS International Conference & Exhibition on High Temperature Electronics (HiTEC2010), TA16.
21. R. Gajerski, A. Matechi, B. Prochowska-Klisch, and M. Wierzbicha, J. Therm. Anal. 45, 979 (1995).
22. R.K. Shiue, L.W. Tsay, C.L. Lin, and J.L. Ou, Microelectron. Reliab. 43, 453 (2003).
23. H. Okamoto, Phase Diagrams for Binary Alloys (Materials Park, OH, USA: ASM International, 2000).
24. S.V. Nagender Naidu, A.M. Sriramamurthy, and P. Rama Rao, J. Alloy Phase Diagr. 5, 159 (1989).
25. G.F. Hardy and J.K. Hulm, Phys. Rev. 93, 1014 (1954).
26. S.V. Popova, Physica Scr. 25, 131 (1982).
27. A.R. Miedema, J. Less Common Met. 46, 67 (1976).
28. S. Gaudet, C. Detavernier, A.J. Kellock, P. Desjardins, and C. Lavoie, J. Vac. Sci. Technol. A 24, 474 (2006).
29. Z.H. Zhong, T. Hinoki, H.C. Jung, Y.H. Park, and A. Kohyama, Mater. Des. 31, 1070 (2010).
30. P. Choi, T. Al-Kassab, F. Gartner, H. Kreye, and R. Kirchheim, Mater. Sci. Eng. A353, 74 (2003).
31. S. Bagchi and N.P. Lalla, Thin Solid Films 515, 5227 (2007).
32. F.Q. Lang, H. Nakagawa, M. Aoyagi, H. Ohashi, and H. Yamaguchi, J. Mater. Sci. Mater. Electron. 21, 917 (2010).
33. S.Q. Zhou, W. Zhao, W. Xiong, and H.Z. Guo, Int. J. Ref. Met. Hard Mater. 27, 740 (2009).
34. F. Nemouchi, D. Mangelinck, J.L. Labar, M. Putero, C. Bergman, and P. Gas, Appl. Phys. Lett. 89, 131920 (2006).
35. J. Ken Patterson, B.J. Park, K. Ritley, H.Z. Xiao, L.H. Allen, and A. Rockett, Thin Solid Films 253, 456 (1994).
36. C. Perrin, D. Mangelinck, F. Nemouchi, J. Labar, C. Lavoie, C. Bergman, and P. Gas, Mater. Sci. Eng. B 154, 163 (2008).
37. F. Nemouchi, D. Mangelinck, J.L. Labar, M. Putero, C. Bergman, and P. Gas, Microelectron. Eng. 83, 2101 (2006).
38. J. Li, Q.Z. Hong, J.W. Mayer, and L. Rathbun, J. Appl. Phys. 67, 2506 (1990).
39. C. Perrin, D. Mangelinck, F. Nemouchi, J. Labar, C. Lavoie, C. Bergman, and P. Gas, Mater. Sci. Eng. B 154-155, 163 (2008).
40. http://www.mmc.co.jp/adv/ele/electric1-4.hyml.
41. S.L. Hsu, C.H. Chien, M.J. Yang, R.H. Huang, C.C. Leu, S.W. Shen, and T. His, Appl Phys. Lett. 86, 251906 (2005).
42. R. Padyath, J. Seth, and S.V. Babu, Thin Solid Films 239, 8 (1994).
43. V.F. Drobny and D.L. Pulfrey, Thin Solid Films 61, 89 (1979).
44. T.S. Abhilash, Ch. Ravi Kumar, B. Sreedhar, and G. Rajaram, Semicond. Sci. Technol. 25, 035002 (2010).