A comparative study of nickel silicides and nickel germanides: Phase formation and kinetics

Microelectronic Engineering

Volumn 83, Issue 11-12, 2006, Pages 2101-2106

  Nemouchi, F ^a   Mangelinck, D ^a   Labar J L ^b   Putero, M ^a   Bergman, C ^a   Gas, P ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH (MATERIALS); INTERFACES (MATERIALS); MICROELECTRONICS; PHASE TRANSITIONS; REACTION KINETICS; THIN FILMS;

LINEAR-PARABOLIC LAW; MICROELECTRONIC APPLICATIONS; MICROELECTRONIC INDUSTRY; THIN FILM REACTIONS;

NICKEL COMPOUNDS;

EID: 33751342928     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.09.014     Document Type: Article

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